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GSIB2080-E3 PDF预览

GSIB2080-E3

更新时间: 2024-11-09 14:33:43
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
4页 201K
描述
DIODE 3.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GSIB-5S, 4 PIN, Bridge Rectifier Diode

GSIB2080-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:unknown
HTS代码:8541.10.00.80风险等级:5.29
其他特性:UL RECOGNIZED外壳连接:ISOLATED
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
最大非重复峰值正向电流:240 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:3.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GSIB2080-E3 数据手册

 浏览型号GSIB2080-E3的Datasheet PDF文件第2页浏览型号GSIB2080-E3的Datasheet PDF文件第3页浏览型号GSIB2080-E3的Datasheet PDF文件第4页 
GSIB2020 thru GSIB2080  
New Product  
Vishay General Semiconductor  
Single-Phase Single In-Line Bridge Rectifiers  
Major Ratings and Characteristics  
Case Style GSIB-5S  
IF(AV)  
VRRM  
IFSM  
IR  
20 A  
200 V to 800 V  
240 A  
10 µA  
VF  
1.0 V  
Tj max.  
150 °C  
~
~
~
~
Features  
• UL Recognition file number E54214  
• Thin Single In-Line package  
Mechanical Data  
Case: GSIB-5S  
Epoxy meets UL-94V-0 Flammability rating  
• Glass passivated chip junction  
• High surge current capability  
Terminals: Matte tin plated (E3 Suffix) leads, solder-  
able per J-STD-002B and JESD22-B102D  
• High case dielectric strength of 2500 V  
• Solder Dip 260 °C, 40 seconds  
Polarity: As marked on body  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7cm-kg (5 inches-lbs)  
RMS  
Typical Applications  
General purpose use in ac-to-dc bridge full wave rec-  
tification for Switching Power Supply, Home Appli-  
ances, Office Equipment, Industrial Automation  
applications  
Maximum Ratings  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Symbol  
VRRM  
GSIB2020  
200  
GSIB2040  
400  
GSIB2060  
600  
GSIB2080  
800  
Unit  
V
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRMS  
VDC  
140  
200  
280  
400  
420  
600  
560  
800  
V
V
A
Maximum DC blocking voltage  
Maximum average forward rectified  
output current at  
TC = 87 °C(1)  
TA = 25 °C(2)  
IF(AV)  
20  
3.5  
Peak forward surge current single sine-wave  
superimposed on rated load  
IFSM  
240  
A
I2t  
A2sec  
°C  
Rating for fusing (t < 8.3 ms)  
240  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Electrical Characteristics  
Ratings at 25 °C ambient temperature unless otherwise specified.  
Parameter  
Test condition  
at 10 A  
Symbol  
VF  
GSIB2020  
GSIB2040  
GSIB2060  
GSIB2080  
Unit  
V
Maximum instantaneous forward  
voltage drop per leg  
1.00  
Maximum DC reverse current at  
rated DC blocking voltage per leg  
TA = 25 °C  
IR  
10  
250  
µA  
TA = 125 °C  
Document Number 88645  
12-Jul-05  
www.vishay.com  
1

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