GTM CORPORATION
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GSB1132
P N P E P I TA XI A L S I L I C O N T R A N S I S T O R
Description
The GSB1132 is a epitaxial planar type PNP silicon transistor .
Features
Low VCE(sat). VCE(sat) = -0.2V(Typ.) (IC/IB = -500mA / -50 mA)
Package Dimensions
SOT-89
REF.
Millimeter
REF.
Millimeter
Min. Max.
3.00 REF.
Min.
4.4
Max.
4.6
A
B
C
D
E
F
G
H
I
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
1.50 REF.
0.40
1.40
0.35
0.52
J
1.60
0.41
K
L
5q TYP.
M
0.70 REF.
Absolute Maximum Ratings (Ta = 25к,unless otherwise specified)
Parameter
Symbol
Ratings
Unit
ć
ć
V
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current(DC)
V
V
V
CBO
CEO
EBO
-40
-32
-5
V
V
I
C
C
-1
A
Collector Current(PULSE)
Collector Power Dissipation
(note1)
I
-2
A
P
D
D
0.5
2
W
W
Collector Power Dissipation (note2)
Note 1:Single pulse, PW=100ms
Note 2: When mounted on a 40*40*0.7 mm ceramic board.
P
Electrical Characteristics (Ta = 25к,unless otherwise specified)
Symbol
Min.
Typ.
Max.
-
Unit
V
Test Conditions
BVCBO
-40
-32
-5
-
-
IC=-50uA
IC=-1mA
IE=-50uA
VCB=-20V
VEB=-4V
BVCEO
BVEBO
-
-
V
-
-
-
V
I
CBO
EBO
-0.5
-0.5
-0.5
390
-
uA
uA
V
I
-
-
VCE(sat)
-
-0.2
-
IC=-500mA, IB=-50mA(note)
VCE=-3V, IC=-100mA
hFE
fT
82
-
150
20
MHz
pF
VCE=-5V, IE=-50mA, f=30MHz
VCE=-10V, IE=0A, f=1MHz
Cob
-
30
Note: Measured using pulse current.
Classification Of hFE
Rank
P
Q
R
RANGE
82 - 180
120 - 270
180 - 390
GTM Product Specification