Datasheet > 存储 > SRAM> GS880Z32BGT-200IV

GS880Z32BGT-200IV

更新时间： 2024-11-18 04:56:31

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
24页	993K
描述
9Mb Pipelined and Flow Through Synchronous NBT SRAM

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GS880Z32BGT-200IV 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.72	Is Samacsys：	N
最长访问时间：	6.5 ns	其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e3
长度：	20 mm	内存密度：	8388608 bit
内存集成电路类型：	ZBT SRAM	内存宽度：	32
湿度敏感等级：	3	功能数量：	1
端子数量：	100	字数：	262144 words
字数代码：	256000	工作模式：	SYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX32	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	2 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子面层：	Matte Tin (Sn)
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS880Z32BGT-200IV 数据手册

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GS880Z18/32/36BT-xxxV

250 MHz–150 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

9Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization; Fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 1.8 V or 2.5 V +10%/–10% core power supply

• 1.8 V or 2.5 V I/O supply

• User-configurable Pipeline and Flow Through mode

• LBO pin for Linear or Interleave Burst mode

• Pin compatible with 2M, 4M, and 18M devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

The GS880Z18/32/36BT-xxxV may be configured by the user

to operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, meaning that in addition to the

rising edge triggered registers that capture input signals, the

device incorporates a rising-edge-triggered output register. For

read cycles, pipelined SRAM output data is temporarily stored

by the edge triggered output register during the access cycle

and then released to the output drivers at the next rising edge of

clock.

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP package available

Functional Description

The GS880Z18/32/36BT-xxxV is a 9Mbit Synchronous Static

SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or

other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS880Z18/32/36BT-xxxV is implemented with GSI's

high performance CMOS technology and is available in a

JEDEC-standard 100-pin TQFP package.

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

Paramter Synopsis

-250

-200

-150

Unit

t_KQ

3.0

4.0

3.0

5.0

3.8

6.7

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x32/x36)

200

230

170

195

140

160

t_KQ

5.5

6.5

7.5

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x32/x36)

160

185

140

160

128

145

Rev: 1.03 6/2006

1/24

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...24

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与GS880Z32BGT-200IV相关器件

型号	品牌	获取价格	描述	数据表
GS880Z32BGT-200IVT	GSI	获取价格	ZBT SRAM, 256KX32, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS880Z32BGT-200V	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z32BGT-200VT	GSI	获取价格	ZBT SRAM, 256KX32, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS880Z32BGT-250IV	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z32BGT-250IVT	GSI	获取价格	ZBT SRAM, 256KX32, 5.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS880Z32BGT-250V	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z32BGT-250VT	GSI	获取价格	暂无描述
GS880Z32BT-150	GSI	获取价格	ZBT SRAM, 256KX32, 7.5ns, CMOS, PQFP100, TQFP-100
GS880Z32BT-150IV	GSI	获取价格	9Mb Pipelined and Flow Through Synchronous NBT SRAM
GS880Z32BT-150IVT	GSI	获取价格	ZBT SRAM, 256KX32, 7.5ns, CMOS, PQFP100, TQFP-100

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