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GS88036BT-333IT PDF预览

GS88036BT-333IT

更新时间： 2024-11-08 14:42:23
品牌 Logo 应用领域
罗彻斯特 - ROCHESTER 静态存储器内存集成电路
页数 文件大小 规格书
24页 1384K
描述
Cache SRAM, 256KX36, 4.5ns, CMOS, PQFP100, TQFP-100

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GS88036BT-333IT 技术参数

生命周期：Contact Manufacturer包装说明：LQFP,
Reach Compliance Code：unknownECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.64
最长访问时间：4.5 ns其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码：R-PQFP-G100长度：20 mm
内存密度：9437184 bit内存集成电路类型：CACHE SRAM
内存宽度：36功能数量：1
端子数量：100字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX36封装主体材料：PLASTIC/EPOXY
封装代码：LQFP封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
座面最大高度：1.6 mm最大供电电压 (Vsup)：2.7 V
最小供电电压 (Vsup)：2.3 V标称供电电压 (Vsup)：2.5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
宽度：14 mmBase Number Matches：1

GS88036BT-333IT 数据手册

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GS88018/32/36BT-333/300/250/200/150  
333 MHz–150 MHz  
100-Pin TQFP  
Commercial Temp  
Industrial Temp  
512K x 18, 256K x 32, 256K x 36  
9Mb Sync Burst SRAMs  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Features  
• FT pin for user-configurable flow through or pipeline  
operation  
• Single Cycle Deselect (SCD) operation  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
• Automatic power-down for portable applications  
• JEDEC-standard 100-lead TQFP package  
• RoHS-compliant 100-lead TQFP package available  
Flow Through/Pipeline Reads  
The function of the Data Output register can be controlled by  
the user via the FT mode pin (Pin 14). Holding the FT mode  
pin low places the RAM in Flow Through mode, causing  
output data to bypass the Data Output Register. Holding FT  
high places the RAM in Pipelie mode, activating the rising-  
edge-triggered Data Outegister.  
SCD Pipelined Reads  
The GS88018/32/36BT is a SCD (Single Cycle Deselect)  
pipelined synchrnous SRAM. DCD (Dual Cycle Deselect)  
versions are also available. SCD SRAMs pipeline deselect  
commands one stage less than read commands. SCD RAMs  
begin turning off their outputs immediately after the deselect  
comnd has been captured in the input registers.  
Functional Description  
Applications  
The GS88018/32/36BT is a 9,437,184-bit (8,388,608-bit for  
x32 version) high performance synchronous SRAM with a  
2-bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPUs, the device now finds application in  
synchronous SRAM applications, ranging from DSP main  
store to networking chip set support.  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write  
control inputs.  
Controls  
Sleep Mode  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV), and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (C. Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with ther ADSP or ADSC inputs. In  
Burst mode, subsequent buraddresses are generated  
internally and are controlled by ADV. The burst address  
counter may be confiured to count in either linear or  
Low power (Sleep mode) is attained through the assertion  
(High) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Core and Interface Voltages  
The GS88018/32/36BT operates on a 2.5 V or 3.3 V power  
supply. All input are 3.3 V and 2.5 V compatible. Separate  
output power (V  
) pins are used to decouple output noise  
DDQ  
from the internal circuits and are 3.3 V and 2.5 V compatible.  
Parameter Synopsis  
-333  
-300  
-250  
-200  
-150  
Unit  
tKQ  
2.5  
3.0  
2.5  
3.3  
2.5  
4.0  
3.0  
5.0  
3.8  
6.7  
ns  
ns  
tCycle  
Pipeline  
3-1-1-1  
Curr (x18)  
Curr (x32/x36)  
250  
290  
230  
265  
200  
230  
170  
195  
140  
160  
mA  
mA  
tKQ  
4.5  
4.5  
5.0  
5.0  
5.5  
5.5  
6.5  
6.5  
7.5  
7.5  
ns  
ns  
tCycle  
Flow Through  
2-1-1-1  
Curr (x18)  
Curr (x32/x36)  
200  
230  
185  
210  
160  
185  
140  
160  
128  
145  
mA  
mA  
Rev: 1.05 11/2008  
1/24  
© 2002, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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