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GS88036CGT-150IT

更新时间： 2024-11-08 20:41:31
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
23页 353K
描述
Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

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GS88036CGT-150IT 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：QFP
包装说明：LQFP, QFP100,.63X.87针数：100
Reach Compliance Code：compliantECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.25
Is Samacsys：N最长访问时间：7.5 ns
其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLYI/O 类型：COMMON
JESD-30 代码：R-PQFP-G100JESD-609代码：e3
长度：20 mm内存密度：9437184 bit
内存集成电路类型：CACHE SRAM内存宽度：36
湿度敏感等级：3功能数量：1
端子数量：100字数：262144 words
字数代码：256000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：256KX36输出特性：3-STATE
封装主体材料：PLASTIC/EPOXY封装代码：LQFP
封装等效代码：QFP100,.63X.87封装形状：RECTANGULAR
封装形式：FLATPACK, LOW PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：260电源：2.5/3.3 V
认证状态：Not Qualified座面最大高度：1.6 mm
最大待机电流：0.045 A最小待机电流：2.3 V
子类别：SRAMs最大压摆率：0.16 mA
最大供电电压 (Vsup)：2.7 V最小供电电压 (Vsup)：2.3 V
标称供电电压 (Vsup)：2.5 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：PURE MATTE TIN端子形式：GULL WING
端子节距：0.65 mm端子位置：QUAD
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：14 mm
Base Number Matches：1

GS88036CGT-150IT 数据手册

 浏览型号GS88036CGT-150IT的Datasheet PDF文件第2页浏览型号GS88036CGT-150IT的Datasheet PDF文件第3页浏览型号GS88036CGT-150IT的Datasheet PDF文件第4页浏览型号GS88036CGT-150IT的Datasheet PDF文件第5页浏览型号GS88036CGT-150IT的Datasheet PDF文件第6页浏览型号GS88036CGT-150IT的Datasheet PDF文件第7页 
GS88018/32/36CT-xxxI  
333 MHz–150 MHz  
512K x 18, 256K x 32, 256K x 36  
9Mb Sync Burst SRAMs  
100-Pin TQFP  
Industrial Temp  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
interleave order with the Linear Burst Order (LBO) input. The  
Burst function need not be used. New addresses can be loaded  
on every cycle with no degradation of chip performance.  
Features  
• FT pin for user-configurable flow through or pipeline  
operation  
• Single Cycle Deselect (SCD) operation  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• LBO pin for Linear or Interleaved Burst mode  
• Internal input resistors on mode pins allow floating mode pins  
• Default to Interleaved Pipeline mode  
• Byte Write (BW) and/or Global Write (GW) operation  
• Internal self-timed write cycle  
• Automatic power-down for portable applications  
• JEDEC-standard 100-lead TQFP package  
• RoHS-compliant 100-lead TQFP package available  
Flow Through/Pipeline Reads  
The function of the Data Output register can be controlled by  
the user via the FT mode pin (Pin 14). Holding the FT mode  
pin low places the RAM in Flow Through mode, causing  
output data to bypass the Data Output Register. Holding FT  
high places the RAM in Pipeline mode, activating the rising-  
edge-triggered Data Output Register.  
SCD Pipelined Reads  
The GS88018/32/36CT is a SCD (Single Cycle Deselect)  
pipelined synchronous SRAM. DCD (Dual Cycle Deselect)  
versions are also available. SCD SRAMs pipeline deselect  
commands one stage less than read commands. SCD RAMs  
begin turning off their outputs immediately after the deselect  
command has been captured in the input registers.  
Functional Description  
Applications  
The GS88018/32/36CT is a 9,437,184-bit (8,388,608-bit for  
x32 version) high performance synchronous SRAM with a  
2-bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPUs, the device now finds application in  
synchronous SRAM applications, ranging from DSP main  
store to networking chip set support.  
Byte Write and Global Write  
Byte write operation is performed by using Byte Write enable  
(BW) input combined with one or more individual byte write  
signals (Bx). In addition, Global Write (GW) is available for  
writing all bytes at one time, regardless of the Byte Write  
control inputs.  
Controls  
Sleep Mode  
Addresses, data I/Os, chip enables (E1, E2, E3), address burst  
control inputs (ADSP, ADSC, ADV), and write control inputs  
(Bx, BW, GW) are synchronous and are controlled by a  
positive-edge-triggered clock input (CK). Output enable (G)  
and power down control (ZZ) are asynchronous inputs. Burst  
cycles can be initiated with either ADSP or ADSC inputs. In  
Burst mode, subsequent burst addresses are generated  
internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or  
Low power (Sleep mode) is attained through the assertion  
(High) of the ZZ signal, or by stopping the clock (CK).  
Memory data is retained during Sleep mode.  
Core and Interface Voltages  
The GS88018/32/36CT operates on a 2.5 V or 3.3 V power  
supply. All input are 3.3 V and 2.5 V compatible. Separate  
output power (V  
) pins are used to decouple output noise  
DDQ  
from the internal circuits and are 3.3 V and 2.5 V compatible.  
Parameter Synopsis  
-333I  
-300I  
-250I  
-200I  
-150I  
Unit  
tKQ  
2.5  
3.0  
2.5  
3.3  
2.5  
4.0  
3.0  
5.0  
3.8  
6.7  
ns  
ns  
tCycle  
Pipeline  
3-1-1-1  
Curr (x18)  
Curr (x32/x36)  
260  
300  
245  
280  
215  
245  
190  
215  
160  
180  
mA  
mA  
tKQ  
4.5  
4.5  
5.0  
5.0  
5.5  
5.5  
6.5  
6.5  
7.5  
7.5  
ns  
ns  
tCycle  
Flow Through  
2-1-1-1  
Curr (x18)  
Curr (x32/x36)  
200  
225  
185  
210  
180  
200  
160  
180  
148  
165  
mA  
mA  
Rev: 1.04 6/2012  
1/23  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
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与GS88036CGT-150IT相关器件

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GS88036CGT-150IV GSI

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 		100 TQFP
GS88036CGT-150T GSI

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 		Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS88036CGT-150V GSI

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 		Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS88036CGT-150VT GSI

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 		Cache SRAM, 256KX36, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS88036CGT-200 GSI

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 		512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88036CGT-200I GSI

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 		100 TQFP
GS88036CGT-200IV GSI

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 		Cache SRAM, 256KX36, 6.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS88036CGT-200V GSI

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 		100 TQFP
GS88036CGT-250 GSI

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 		512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs
GS88036CGT-250I GSI

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 		100 TQFP

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