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GS820E32AGQ-133IT PDF预览

GS820E32AGQ-133IT

更新时间： 2024-11-13 06:47:47
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
23页 344K
描述
Cache SRAM, 64KX32, 10ns, CMOS, PQFP100, QFP-100

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GS820E32AGQ-133IT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：QFP
包装说明：QFP,针数：100
Reach Compliance Code：compliantECCN代码：3A991.B.2.B
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：10 ns其他特性：FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码：R-PQFP-G100JESD-609代码：e3
长度：20 mm内存密度：2097152 bit
内存集成电路类型：CACHE SRAM内存宽度：32
湿度敏感等级：3功能数量：1
端子数量：100字数：65536 words
字数代码：64000工作模式：SYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：64KX32封装主体材料：PLASTIC/EPOXY
封装代码：QFP封装形状：RECTANGULAR
封装形式：FLATPACK并行/串行：PARALLEL
峰值回流温度（摄氏度）：260认证状态：Not Qualified
座面最大高度：3.35 mm最大供电电压 (Vsup)：3.6 V
最小供电电压 (Vsup)：3.135 V标称供电电压 (Vsup)：3.3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：PURE MATTE TIN
端子形式：GULL WING端子节距：0.65 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：14 mm

GS820E32AGQ-133IT 数据手册

 浏览型号GS820E32AGQ-133IT的Datasheet PDF文件第2页浏览型号GS820E32AGQ-133IT的Datasheet PDF文件第3页浏览型号GS820E32AGQ-133IT的Datasheet PDF文件第4页浏览型号GS820E32AGQ-133IT的Datasheet PDF文件第5页浏览型号GS820E32AGQ-133IT的Datasheet PDF文件第6页浏览型号GS820E32AGQ-133IT的Datasheet PDF文件第7页 
GS820E32AT/Q-150/138/133/117/100/66  
150Mhz - 66Mhz  
9ns - 18ns  
3.3V VDD  
3.3V & 2.5V I/O  
TQFP, QFP  
Commercial Temp  
Industrial Temp  
64K x 32  
2M Synchronous Burst SRAM  
Flow Through / Pipeline Reads  
Features  
The function of the Data Output register can be controlled by the user  
via the FT mode pin/bump (Pin 14 in the TQFP, bump 1F in the FP-  
BGA). Holding the FT mode pin/bump low, places the RAM in Flow  
through mode, causing output data to bypass the Data Output  
Register. Holding FT high places the RAM in Pipelined Mode,  
activating the rising edge triggered Data Output Register.  
• FT pin for user configurable flow through or pipelined operation.  
• Dual Cycle Deselect (DCD) Operation.  
• 3.3V +10%/-5% Core power supply  
• 2.5V or 3.3V I/O supply.  
• LBO pin for linear or interleaved burst mode.  
• Internal input resistors on mode pins allow floating mode pins.  
• Default to Interleaved Pipelined Mode.  
DCD Pipelined Reads  
• Byte write (BW) and/or global write (GW) operation.  
• Common data inputs and data outputs.  
• Clock Control, registered, address, data, and control.  
• Internal Self-Timed Write cycle.  
• Automatic power-down for portable applications.  
• JEDEC standard 100-lead TQFP or QFP package.  
The GS820E32A is a DCD (Dual Cycle Deselect) pipelined  
synchronous SRAM. SCD (Single Cycle Deselect) versions are also  
available. DCD SRAMs pipeline disable commands to the same  
degree as read commands. DCD RAMs hold the deselect command  
for one full cycle and then begin turning off their outputs just after the  
second rising edge of clock.  
Byte Write and Global Write  
-150  
Pipeline tCycle 6.6ns 7.25ns 7.5ns 8.5ns 10ns 12.5ns  
3-1-1-1 3.8ns 4ns 4ns 4.5 5ns 6ns  
IDD 270mA 245mA 240mA 210mA 180mA 150mA  
Flow tCycle 10.5ns 15ns 15ns 15ns 15ns 20ns  
Through tKQ 9ns 9.7ns 10ns 11ns 12ns 18ns  
2-1-1-1 IDD 170mA 120mA 120mA 120mA 120mA 95mA  
-138  
-133  
-117  
-100  
-66  
Byte write operation is performed by using byte write enable (BW)  
input combined with one or more individual byte write signals (Bx). In  
addition, Global Write (GW) is available for writing all bytes at one  
time, regardless of the Byte Write control inputs.  
tKQ  
Sleep Mode  
Low power (Sleep mode) is attained through the assertion (High) of  
the ZZ signal, or by stopping the clock (CK). Memory data is retained  
during Sleep mode.  
Functional Description  
Core and Interface Voltages  
The GS820E32A operates on a 3.3V power supply and all inputs/  
outputs are 3.3V and 2.5V compatible. Separate output power (VDDQ)  
pins are used to de-couple output noise from the internal circuit.  
Applications  
The GS820E32A is a 2,097,152 bit high performance synchronous  
SRAM with a 2 bit burst address counter. Although of a type originally  
developed for Level 2 Cache applications supporting high  
performance CPU’s, the device now finds application in synchronous  
SRAM applications ranging from DSP main store to networking chip  
set support.  
Controls  
Addresses, data I/O’s, chip enables (E1, E2, E3), address burst control  
inputs (ADSP, ADSC, ADV) and write control inputs (Bx, BW, GW) are  
synchronous and are controlled by a positive edge triggered clock  
input (CK). Output enable (G) and power down control (ZZ) are  
asynchronous inputs. Burst cycles can be initiated with either ADSP  
or ADSC inputs. In Burst mode, subsequent burst addresses are  
generated internally and are controlled by ADV. The burst address  
counter may be configured to count in either linear or interleave order  
with the Linear Burst Order (LBO) input. The Burst function need not  
be used. New addresses can be loaded on every cycle with no  
degradation of chip performance.  
Rev: 1.04 3/2000  
1/23  
© 2000, Giga Semiconductor, Inc.  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  
E
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 		64K x 32 2Mb Synchronous Burst SRAM
GS820E32AGT-133I GSI

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 		64K x 32 2Mb Synchronous Burst SRAM
GS820E32AGT-133IT GSI

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 		Cache SRAM, 64KX32, 10ns, CMOS, PQFP100, LEAD FREE, TQFP-100

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