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GS8162Z18BB-250 PDF预览

GS8162Z18BB-250

更新时间: 2024-11-05 03:54:03
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GSI 静态存储器
页数 文件大小 规格书
34页 1555K
描述
18Mb Pipelined and Flow Through Synchronous NBT SRAM

GS8162Z18BB-250 数据手册

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GS8162Z18/36B(B/D)  
250 MHz150 MHz  
119- & 165-Bump BGA  
Commercial Temp  
Industrial Temp  
18Mb Pipelined and Flow Through  
Synchronous NBT SRAM  
2.5 V or 3.3 V V  
DD  
2.5 V or 3.3 V I/O  
Features  
Because it is a synchronous device, address, data inputs, and  
read/write control inputs are captured on the rising edge of the  
input clock. Burst order control (LBO) must be tied to a power  
rail for proper operation. Asynchronous inputs include the  
Sleep mode enable (ZZ) and Output Enable. Output Enable can  
be used to override the synchronous control of the output  
drivers and turn the RAM's output drivers off at any time.  
Write cycles are internally self-timed and initiated by the rising  
edge of the clock input. This feature eliminates complex off-  
chip write pulse generation required by asynchronous SRAMs  
and simplifies input signal timing.  
• NBT (No Bus Turn Around) functionality allows zero wait  
Read-Write-Read bus utilization; fully pin-compatible with  
both pipelined and flow through NtRAM™, NoBL™ and  
ZBT™ SRAMs  
• 2.5 V or 3.3 V +10%/–10% core power supply  
• 2.5 V or 3.3 V I/O supply  
• User-configurable Pipeline and Flow Through mode  
• ZQ mode pin for user-selectable high/low output drive  
• IEEE 1149.1 JTAG-compatible Boundary Scan  
• On-chip write parity checking; even or odd selectable  
• On-chip parity encoding and error detection  
• LBO pin for Linear or Interleave Burst mode  
• Pin-compatible with 2M, 4M, and 8M devices  
• Byte write operation (9-bit Bytes)  
The GS8162Z18/36B(B/D) may be configured by the user to  
operate in Pipeline or Flow Through mode. Operating as a  
pipelined synchronous device, in addition to the rising-edge-  
triggered registers that capture input signals, the device  
incorporates a rising edge triggered output register. For read  
cycles, pipelined SRAM output data is temporarily stored by  
the edge-triggered output register during the access cycle and  
then released to the output drivers at the next rising edge of  
clock.  
• 3 chip enable signals for easy depth expansion  
• ZZ Pin for automatic power-down  
• JEDEC-standard 119-bump and 165-bump BGA packages  
• RoHS-compliant 119-bump and 165-bump BGA packages  
available  
Functional Description  
The GS8162Z18/36B(B/D) is implemented with GSI's high  
performance CMOS technology and is available in a JEDEC-  
standard 119-bump or 165-bump BGA package.  
The GS8162Z18/36B(B/D) is an 18Mbit Synchronous Static  
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or  
other pipelined read/double late write or flow through read/  
single late write SRAMs, allow utilization of all available bus  
bandwidth by eliminating the need to insert deselect cycles  
when the device is switched from read to write cycles.  
Parameter Synopsis  
-250  
-200  
-150  
Unit  
ns  
ns  
tKQ  
2.5  
4.0  
3.0  
5.0  
3.8  
6.7  
tCycle  
Pipeline  
3-1-1-1  
mA  
mA  
295  
345  
245  
285  
200  
225  
Curr (x18)  
Curr (x36)  
tKQ  
5.5  
5.5  
6.5  
6.5  
7.5  
7.5  
ns  
ns  
tCycle  
Flow Through  
2-1-1-1  
mA  
mA  
225  
255  
200  
220  
185  
205  
Curr (x18)  
Curr (x36)  
Rev: 1.04a 2/2006  
1/34  
© 2004, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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