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GS8161E32AD-166IT PDF预览

GS8161E32AD-166IT

更新时间: 2024-10-26 13:22:27
品牌 Logo 应用领域
GSI 静态存储器内存集成电路
页数 文件大小 规格书
39页 1122K
描述
Cache SRAM, 512KX32, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165

GS8161E32AD-166IT 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:BGA,针数:165
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.67
Is Samacsys:N其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY
JESD-30 代码:R-PBGA-B165长度:15 mm
内存密度:16777216 bit内存集成电路类型:CACHE SRAM
内存宽度:32功能数量:1
端子数量:165字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX32封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
认证状态:Not Qualified最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.6 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:BALL
端子节距:1 mm端子位置:BOTTOM
宽度:13 mmBase Number Matches:1

GS8161E32AD-166IT 数据手册

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Revision: 9/26/02  
GS8161E18/32/36AD  
Supplemental Datasheet Information  
This supplemental information applies to the GS8161E18/36AT datasheet, which you  
will find attached to this document. This supplement includes a new package offering  
(the 165-bump BGA—Package D), as well as an additional organization (x32, which is  
only offered in the 165 BGA for this part).  
1/8  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
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Cache SRAM, 512KX32, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
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暂无描述
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1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs
GS8161E32BD-150VT GSI

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Cache SRAM, 512KX32, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
GS8161E32BD-200 GSI

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1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs