生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 165 |
Reach Compliance Code: | unknown | ECCN代码: | 3A991.B.2.B |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.67 |
Is Samacsys: | N | 其他特性: | FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V SUPPLY |
JESD-30 代码: | R-PBGA-B165 | 长度: | 15 mm |
内存密度: | 16777216 bit | 内存集成电路类型: | CACHE SRAM |
内存宽度: | 32 | 功能数量: | 1 |
端子数量: | 165 | 字数: | 524288 words |
字数代码: | 512000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 512KX32 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | BGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY | 并行/串行: | PARALLEL |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 2 V |
最小供电电压 (Vsup): | 1.6 V | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 1 mm | 端子位置: | BOTTOM |
宽度: | 13 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GS8161E32AD-225 | GSI |
获取价格 |
Cache SRAM, 512KX32, 6ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | |
GS8161E32BD-150 | GSI |
获取价格 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | |
GS8161E32BD-150I | GSI |
获取价格 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | |
GS8161E32BD-150IV | GSI |
获取价格 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | |
GS8161E32BD-150IVT | GSI |
获取价格 |
Cache SRAM, 512KX32, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | |
GS8161E32BD-150T | GSI |
获取价格 |
暂无描述 | |
GS8161E32BD-150V | GSI |
获取价格 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | |
GS8161E32BD-150VT | GSI |
获取价格 |
Cache SRAM, 512KX32, 7.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | |
GS8161E32BD-200 | GSI |
获取价格 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs | |
GS8161E32BD-200I | GSI |
获取价格 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs |