Datasheet > 存储 > SRAM> GS8160V18CGT-300

GS8160V18CGT-300

更新时间： 2024-11-07 05:10:43

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
21页	560K
描述
1M x 18 and 512K x 36 18Mb Sync Burst SRAMs

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技术参数
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GS8160V18CGT-300 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	QFP
包装说明：	LQFP,	针数：	100
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.84
最长访问时间：	5 ns	其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码：	R-PQFP-G100	JESD-609代码：	e3
长度：	20 mm	内存密度：	18874368 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	100	字数：	1048576 words
字数代码：	1000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	260	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	2 V
最小供电电压 (Vsup)：	1.6 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	PURE MATTE TIN
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS8160V18CGT-300 数据手册

Preliminary

GS8160V18/36CT-333/300/250

100-Pin TQFP

Commercial Temp

Industrial Temp

333 MHz–250 MHz

1M x 18 and 512K x 36

18Mb Sync Burst SRAMs

1.8 V V

1.8 V I/O

cycles can be initiated with either ADSP or ADSC inputs. In

Features

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

• FT pin for user-configurable flow through or pipeline

operation

• Single Cycle Deselect (SCD) operation

• 1.8 V +10%/–10% core power supply

• 1.8 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

• Pb-Free 100-lead TQFP package available

Byte Write and Global Write

Functional Description

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Applications

The GS8160V18/36CT is an 18,874,368-bit (16,777,216-bit

for x32 version) high performance synchronous SRAM with a

2-bit burst address counter. Although of a type originally

developed for Level 2 Cache applications supporting high

performance CPUs, the device now finds application in

synchronous SRAM applications, ranging from DSP main

store to networking chip set support.

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Controls

Core and Interface Voltages

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

The GS8160V18/36CT operates on a 1.8 V power supply. All

input are 1.8 V compatible. Separate output power (V

)

DDQ

pins are used to decouple output noise from the internal circuits

and are 1.8 V compatible.

Parameter Synopsis

-333

-300

-250

Unit

t_KQ

tCycle

2.5

3.0

2.5

3.3

2.5

4.0

Pipeline

3-1-1-1

375

435

335

390

280

330

Curr (x18)

Curr (x32/x36)

t_KQ

4.5

5.0

5.5

tCycle

Flow Through

2-1-1-1

280

335

230

270

210

240

Curr (x18)

Curr (x32/x36)

Rev: 1.00 9/2004

1/21

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...21

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与GS8160V18CGT-300相关器件

型号	品牌	获取价格	描述	数据表
GS8160V18CGT-300I	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CGT-333	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CGT-333I	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CGT-333IT	GSI	获取价格	Cache SRAM, 1MX18, 4.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100
GS8160V18CGT-333T	GSI	获取价格	Cache SRAM, 1MX18, 4.5ns, CMOS, PQFP100, LEAD FREE, TQFP-100
GS8160V18CT	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CT-250	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CT-250I	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CT-300	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs
GS8160V18CT-300I	GSI	获取价格	1M x 18 and 512K x 36 18Mb Sync Burst SRAMs

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