Datasheet > 存储 > SRAM> GS8160F36T-5.5

GS8160F36T-5.5

更新时间： 2024-11-07 05:10:39

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
22页	546K
描述
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs

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技术参数
数据手册

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GS8160F36T-5.5 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.85	Is Samacsys：	N
最长访问时间：	5.5 ns	其他特性：	FLOW-THROUGH ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	18874368 bit	内存集成电路类型：	CACHE SRAM
内存宽度：	36	湿度敏感等级：	3
功能数量：	1	端子数量：	100
字数：	524288 words	字数代码：	512000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	512KX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS8160F36T-5.5 数据手册

GS8160F18/32/36T-5.5/6/6.5/7/7.5/8.5

5.5 ns–8.5 ns

100-Pin TQFP

Commercial Temp

Industrial Temp

1M x 18, 512K x 32, 512K x 36

18Mb Sync Burst SRAMs

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Features

• Flow Through mode operation; Pin 14 = No Connect

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

Designing For Compatibility

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

The JEDEC standard for Burst RAMS calls for a FT mode pin

option on Pin 14. Board sites for flow through Burst RAMS

should be designed with V connected to the FT pin location

to ensure the broadest access to multiple vendor sources.

Boards designed with FT pin pads tied low may be stuffed with

GSI’s pipeline/flow through-configurable Burst RAMs or any

vendor’s flow through or configurable Burst SRAM. Boards

designed with the FT pin location tied high or floating must

employ a non-configurable flow through Burst RAM, like this

RAM, to achieve flow through functionality.

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

Functional Description

Applications

The GS8160F18/32/36T is an 18,874,368-bit (16,777,216-bit

for x32 version) high performance synchronous SRAM with a

2-bit burst address counter. Although of a type originally

developed for Level 2 Cache applications supporting high

performance CPUs, the device now finds application in

synchronous SRAM applications, ranging from DSP main

store to networking chip set support.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Controls

Sleep Mode

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS8160F18/32/36T operates on a 2.5 V or 3.3 V power

supply. All input are 3.3 V and 2.5 V compatible. Separate

output power (V

) pins are used to decouple output noise

DDQ

from the internal circuits and are 3.3 V and 2.5 V compatible.

Parameter Synopsis

-5.5 -6 -6.5 -7 -7.5 -8.5 Unit

Flow

Through

2-1-1-1

t_KQ

5.5

6.0

6.5

7.0

7.5

8.5

tCycle

Curr (x18)

Curr (x32/x36) 200

175

165

190

160

180

150

170

145 135

165 150

3.3 V

2.5 V

Curr (x18) 175

Curr (x32/x36) 200

165

190

160

180

150

170

145 135

165 150

Rev: 2.12 11/2004

1/22

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...22

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与GS8160F36T-5.5相关器件

型号	品牌	获取价格	描述	数据表
GS8160F36T-5.5I	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36T-5.5T	GSI	获取价格	暂无描述
GS8160F36T-6	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36T-6.5	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36T-6.5I	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36T-6.5IT	GSI	获取价格	Cache SRAM, 512KX36, 6.5ns, CMOS, PQFP100, TQFP-100
GS8160F36T-6.5T	GSI	获取价格	Cache SRAM, 512KX36, 6.5ns, CMOS, PQFP100, TQFP-100
GS8160F36T-6I	GSI	获取价格	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
GS8160F36T-6IT	GSI	获取价格	Cache SRAM, 512KX36, 6ns, CMOS, PQFP100, TQFP-100
GS8160F36T-6T	GSI	获取价格	Cache SRAM, 512KX36, 6ns, CMOS, PQFP100, TQFP-100

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