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GS73024AB-10 PDF预览

GS73024AB-10

更新时间: 2024-11-30 03:01:15
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
12页 637K
描述
Asynchronous SRAM

GS73024AB-10 数据手册

 浏览型号GS73024AB-10的Datasheet PDF文件第2页浏览型号GS73024AB-10的Datasheet PDF文件第3页浏览型号GS73024AB-10的Datasheet PDF文件第4页浏览型号GS73024AB-10的Datasheet PDF文件第5页浏览型号GS73024AB-10的Datasheet PDF文件第6页浏览型号GS73024AB-10的Datasheet PDF文件第7页 
GS73024AB  
ns  
3.3 V V  
DD  
Commercial Temp  
Industrial Temp  
V
and V  
SS  
Asynchronous SRAM  
DD  
Features  
• Fast access time: 8, 10, 12 ns  
119-Bump Ball Grid Array Package  
• CMOS low power operation: 250/200/170 mA at minimum  
cycle time  
• Single 3.3 V ± 0.3V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40 to 85°C  
• Package  
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA  
Description  
The GS73024A is a high speed CMOS Static RAM organized  
as 131,072 words by 24 bits. Static design eliminates the need  
for external clocks or timing strobes. Operating on a single  
3.3 V power supply, and all inputs and outputs are  
TTL-compatible. The GS73024A is available in a 119-bump  
BGA package.  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
A16  
Column  
Decoder  
CE  
I/O Buffer  
Control  
WE  
OE  
DQ1  
DQ24  
Pin Descriptions  
Symbol  
A0 to A16  
WE  
Description  
Address input  
Symbol  
DQ1 to DQ24  
Description  
Data input/output  
Write enable input  
Chip enable input  
OE  
Output enable input  
Ground  
V
CE  
SS  
V
+3.3 V power supply  
DD  
Rev: 1.03 12/2005  
1/12  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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