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GS73024AB-8 PDF预览

GS73024AB-8

更新时间: 2024-11-30 03:01:15
品牌 Logo 应用领域
GSI 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 637K
描述
Asynchronous SRAM

GS73024AB-8 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:14 X 22 MM, 1.27 MM PITCH, FPBGA-119针数:119
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41Factory Lead Time:6 weeks
风险等级:5.68Is Samacsys:N
最长访问时间:8 nsJESD-30 代码:R-PBGA-B119
JESD-609代码:e0长度:22 mm
内存密度:3145728 bit内存集成电路类型:STANDARD SRAM
内存宽度:24湿度敏感等级:3
功能数量:1端子数量:119
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX24
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.99 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

GS73024AB-8 数据手册

 浏览型号GS73024AB-8的Datasheet PDF文件第2页浏览型号GS73024AB-8的Datasheet PDF文件第3页浏览型号GS73024AB-8的Datasheet PDF文件第4页浏览型号GS73024AB-8的Datasheet PDF文件第5页浏览型号GS73024AB-8的Datasheet PDF文件第6页浏览型号GS73024AB-8的Datasheet PDF文件第7页 
GS73024AB  
ns  
3.3 V V  
DD  
Commercial Temp  
Industrial Temp  
V
and V  
SS  
Asynchronous SRAM  
DD  
Features  
• Fast access time: 8, 10, 12 ns  
119-Bump Ball Grid Array Package  
• CMOS low power operation: 250/200/170 mA at minimum  
cycle time  
• Single 3.3 V ± 0.3V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40 to 85°C  
• Package  
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA  
Description  
The GS73024A is a high speed CMOS Static RAM organized  
as 131,072 words by 24 bits. Static design eliminates the need  
for external clocks or timing strobes. Operating on a single  
3.3 V power supply, and all inputs and outputs are  
TTL-compatible. The GS73024A is available in a 119-bump  
BGA package.  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
A16  
Column  
Decoder  
CE  
I/O Buffer  
Control  
WE  
OE  
DQ1  
DQ24  
Pin Descriptions  
Symbol  
A0 to A16  
WE  
Description  
Address input  
Symbol  
DQ1 to DQ24  
Description  
Data input/output  
Write enable input  
Chip enable input  
OE  
Output enable input  
Ground  
V
CE  
SS  
V
+3.3 V power supply  
DD  
Rev: 1.03 12/2005  
1/12  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

GS73024AB-8 替代型号

型号 品牌 替代类型 描述 数据表
IS61LV12824-8BL ISSI

类似代替

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
GS73024AB-8I GSI

功能相似

Asynchronous SRAM
IS61LV12824-8BI ISSI

功能相似

128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

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