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GS73024AGB-8 PDF预览

GS73024AGB-8

更新时间: 2024-10-03 06:16:19
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
13页 648K
描述
Standard SRAM, 128KX24, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

GS73024AGB-8 数据手册

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GS73024AB  
8, 10, 12 ns  
BGA  
Commercial Temp  
Industrial Temp  
128K x 24  
3Mb Asynchronous SRAM  
3.3 V V  
DD  
Center V and V  
DD  
SS  
Features  
• Fast access time: 8, 10, 12 ns  
119-Bump Ball Grid Array Package  
• CMOS low power operation: 250/200/170 mA at minimum  
cycle time  
• Single 3.3 V ± 0.3V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40 to 85°C  
• Package  
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA  
GB: RoHS-compliant 119-bump BGA*  
Description  
The GS73024A is a high speed CMOS Static RAM organized  
as 131,072 words by 24 bits. Static design eliminates the need  
for external clocks or timing strobes. Operating on a single  
3.3 V power supply, and all inputs and outputs are  
TTL-compatible. The GS73024A is available in a 119-bump  
BGA package.  
Pin Descriptions  
Symbol  
A0 to A16  
WE  
Description  
Address input  
Symbol  
DQ1 to DQ24  
OE  
Description  
Data input/output  
Write enable input  
Chip enable input  
Output enable input  
Ground  
V
CE  
SS  
V
+3.3 V power supply  
DD  
*All GSI Technology packages are at least 5/6 RoHS compliant.  
Packages listed with the additional “G” designator are 6/6 RoHS compliant.  
Rev: 1.04b 3/2007  
1/13  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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