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GS73024AB-10T PDF预览

GS73024AB-10T

更新时间: 2024-10-02 13:07:59
品牌 Logo 应用领域
GSI 静态存储器
页数 文件大小 规格书
12页 637K
描述
Standard SRAM, 128KX24, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119

GS73024AB-10T 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:BGA
包装说明:14 X 22 MM, 1.27 MM PITCH, FPBGA-119针数:119
Reach Compliance Code:compliantECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.72
Is Samacsys:N最长访问时间:10 ns
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:3145728 bit
内存集成电路类型:STANDARD SRAM内存宽度:24
湿度敏感等级:3功能数量:1
端子数量:119字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX24封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装形状:RECTANGULAR
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.99 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

GS73024AB-10T 数据手册

 浏览型号GS73024AB-10T的Datasheet PDF文件第2页浏览型号GS73024AB-10T的Datasheet PDF文件第3页浏览型号GS73024AB-10T的Datasheet PDF文件第4页浏览型号GS73024AB-10T的Datasheet PDF文件第5页浏览型号GS73024AB-10T的Datasheet PDF文件第6页浏览型号GS73024AB-10T的Datasheet PDF文件第7页 
GS73024AB  
ns  
3.3 V V  
DD  
Commercial Temp  
Industrial Temp  
V
and V  
SS  
Asynchronous SRAM  
DD  
Features  
• Fast access time: 8, 10, 12 ns  
119-Bump Ball Grid Array Package  
• CMOS low power operation: 250/200/170 mA at minimum  
cycle time  
• Single 3.3 V ± 0.3V power supply  
• All inputs and outputs are TTL-compatible  
• Fully static operation  
• Industrial Temperature Option: –40 to 85°C  
• Package  
B: 14 mm x 22 mm, 119-bump, 1.27mm pitch BGA  
Description  
The GS73024A is a high speed CMOS Static RAM organized  
as 131,072 words by 24 bits. Static design eliminates the need  
for external clocks or timing strobes. Operating on a single  
3.3 V power supply, and all inputs and outputs are  
TTL-compatible. The GS73024A is available in a 119-bump  
BGA package.  
Block Diagram  
A0  
Row  
Decoder  
Memory Array  
Address  
Input  
A16  
Column  
Decoder  
CE  
I/O Buffer  
Control  
WE  
OE  
DQ1  
DQ24  
Pin Descriptions  
Symbol  
A0 to A16  
WE  
Description  
Address input  
Symbol  
DQ1 to DQ24  
Description  
Data input/output  
Write enable input  
Chip enable input  
OE  
Output enable input  
Ground  
V
CE  
SS  
V
+3.3 V power supply  
DD  
Rev: 1.03 12/2005  
1/12  
© 2003, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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