Datasheet > GS1M-AU

GS1M-AU

更新时间： 2024-11-15 12:46:23

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
5页	198K
描述
SURFACE MOUNT RECTIFIER

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中文翻译

获取价格

数据手册

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GS1M-AU 数据手册

GS1A-AU~GS1M-AU

SURFACE MOUNT RECTIFIER

50 to 1000 Volts

VOLTAGE

CURRENT

1 Amperes

FEATURES

• For surface mounted applications

• Low profile package

• Built-in strain relief

• Easy pick and place

• Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

0.181(4.60)

0.157(4.00)

• Low Forward Drop

• High temperature soldering : 260°C /10 seconds at terminals

• Glass Passivated Chip Junction

• Lead free in comply with EU RoHS 2002/95/EC directives

• Green molding compound as per IEC61249 Std. . (Halogen Free)

• Acqire quality system certificate : TS16949

012(0

006(0.152)

.305)

• AEC-Q101 qualified

0.008(0.203)

0.002(0.051)

0.060(1.52)

0.030(0.76)

0.208(5.28)

0.188(4.80)

MECHANICAL DATA

• Case: JEDECDO-214AC molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

• Polarity: Indicated by cathode band

• Standard packaging: 12mm tape (EIA-481)

• Weight: 0.002 ounce, 0.067 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

PARAMETER

SYMBOL GS1A-AU GS1B-AU GS1D-AU GS1G-AU GS1J-AU GS1K-AU GS1M-AU UNITS

Maximum Recurrent Peak Reverse Voltage

100

200

140

200

400

280

400

1.0

600

420

600

800

560

800

1000

700

V_RRM

V_RMS

V_{D C}

I_{F(AV )}

I_FSM

V_F

Maximum RMS Voltage

Maximum DC B locking Voltage

100

1000

Maximum Average Forward Currenth at T_L=100 ^OC

Peak Forward Surge C urrent : 8.3ms si ngle half sine-wave

superimposed on rated load (JEDEC method)

Maximum Forward Voltage at 1.0A

1.1

Maximum DC Reverse C urrent at T_J=25^O

Rated DC Blocking Voltage T_J=125^O

1.0

μA

I_R

Typical Junction capaci tance (Note 1)

Typical Junction Resistance (Note 2)

C_J

R_θJL

^OC /

Operating and Storage Temperature Range

-55 to +150

^OC

T_J,T_{S TG}

NOTES:1. Measured at 1 MHz and applied V_r= 4.0 volts.

2. 8.0 mm²( .013mm thick ) land areas.

STAD-FEB.04.2009

PAGE . 1

12 3 4 5

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