Datasheet > GS1MEP

GS1MEP

更新时间： 2024-11-15 19:18:07

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	77K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, SMAE, 2 PIN, Signal Diode

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中文翻译

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技术参数
数据手册

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GS1MEP 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	SMAE, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.37
Base Number Matches：	1

GS1MEP 数据手册

GS1AE

THRU

GS1ME

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

1.0 Amp

Silicon Rectifier

50 to 1000 Volts

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Easy Pick And Place

High Temp Soldering: 260°C for 10 Seconds At Terminals

Low Thermal Resistance

Maximum Ratings

DO-214AC

(SMAE)

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 15°C/W Junction To Lead

Cathode Band

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

GS1AE

GS1BE

GS1DE

GS1GE

GS1JE

GS1KE

GS1ME

GS1A

GS1B

GS1D

GS1G

GS1J

GS1K

GS1M

35V

70V

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

DIMENSIONS

INCHES

MIN

.079

.050

.002

---

MIN

Electrical Characteristics @ 25°C Unless Otherwise Specified

DIM

MAX

.096

.075

.008

.02

MAX

2.44

1.90

.20

NOTE

2.01

1.27

.05

Average Forward

current

I_F(AV)

1.0A

T_J= 75°C

---

.51

.030

.189

.157

.090

.060

.208

.180

.115

.76

1.52

5.30

4.57

2.92

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine,

4.80

4.00

2.29

Maximum

I_FM= 1.0A;

T_J= 25°C*

SUGGESTED SOLDER

PAD LAYOUT

0.090”

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.1V

10µA

50µA

T_J= 25°C

T_J= 125°C

0.085”

Typical Junction

Capacitance

C_J

15pF

Measured at

1.0MHz, V_R=4.0V

0.070”

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

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Revision: 7

2006/08/14

12 3 4

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