Datasheet > GS1M-T

GS1M-T

更新时间： 2024-11-15 19:55:19

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	78K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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GS1M-T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.51	JESD-609代码：	e0
湿度敏感等级：	1	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

GS1M-T 数据手册

GS1A

THRU

GS1M

M C C

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20736 Marilla Street Chatsworth

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Micro Commercial Components

Features

1 Amp

Silicon Rectifier

50 to 1000 Volts



Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

•

Extremely Low Thermal Resistance

High Temp Soldering: 260°C for 10 Seconds At Terminals

Maximum Ratings

DO-214AC

(HSMA) (High Profile)

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 15°C/W Junction To Lead

Cathode Band

MCC

Catalog

Number

Device

Marking

Maximum

Recurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

GS1A

GS1B

GS1D

GS1G

GS1J

GS1K

GS1M

GS1A

GS1B

GS1D

GS1G

GS1J

GS1K

GS1M

35V

70V

100V

200V

400V

600V

800V

1000V

100V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

DIMENSIONS

INCHES

MIN

.078

.067

.002

---

MIN

DIM

MAX

.116

.089

.008

.02

MAX

2.95

2.25

.20

NOTE

Electrical Characteristics @ 25°C Unless Otherwise Specified

1.98

1.70

.05

Average Forward

current

I_F(AV)

1.0A

T_J= 75°C

---

.51

.035

.065

.205

.160

.100

.055

.096

.224

.180

.112

.89

1.40

2.45

5.69

4.57

2.84

1.65

5.21

4.06

2.57

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine,

Maximum

I_FM= 1.0A;

T_J= 25°C*

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

I_R

1.1V

SUGGESTED SOLDER

PAD LAYOUT

0.090”

10µA

50µA

T_J= 25°C

T_J= 125°C

0.085”

Typical Junction

C_J

15pF

Measured at

Capacitance

1.0MHz, V_R=4.0V

0.070”

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

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Revision: 4

2006/05/24

12 3 4

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