Datasheet > GS1M-TS05P

GS1M-TS05P

更新时间： 2024-11-15 21:15:11

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	82K
描述
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214AC, DO-214AC, 2 PIN, Signal Diode

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中文翻译

获取价格

技术参数
数据手册

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GS1M-TS05P 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AC
包装说明：	DO-214AC, 2 PIN	针数：	2
Reach Compliance Code：	unknown	风险等级：	5.66
Base Number Matches：	1

GS1M-TS05P 数据手册

GS1A-TS05

THRU

GS1M-TS05

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

1.0 Amp

Silicon Rectifier

50 to 1000 Volts

ꢀ

•

For Surface Mount Applications

Extremely Low Thermal Resistance

Available on Tape and Reel

High Temp Soldering: 260°C for 10 Seconds At Terminals

Thermal Tape and Pre-flat Structure

ꢀ

Maximum Ratings

DO-214AC

ꢀ

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 15°C/W Junction To Lead

ꢀ

MCC

Catalog

Number

Device

Marking

Maximum

Reccurrent

Peak Reverse

Voltage

50V

Maximum Maximum

RMS

Voltage

Blocking

Voltage

50V

GS1A-TS05 GS1A

GS1B-TS05 GS1B

GS1D-TS05 GS1D

GS1G-TS05 GS1G

35V

70V

100V

200V

400V

100V

200V

400V

140V

280V

420V

560V

700V

GS1J-TS05

GS1J

600V

800V

1000V

600V

800V

1000V

GS1K-TS05 GS1K

GS1M-TS05 GS1M

DIMENSIONS

DIM

INCHES

NOTE

MIN

.079

.055

.002

---

.041

.075

.189

.161

.094

.006

MAX

.091

.063

.008

.096

.045

.083

.201

.177

.102

.012

MIN

MAX

2.32

1.60

0.20

2.44

1.15

2.10

5.10

4.50

2.60

0.30

2.00

1.40

0.05

---

1.05

1.90

4.80

4.10

2.40

0.16

Electrical Characteristics @ 25°C Unless Otherwise Specified

Average Forward

current

I_F(AV)

1.0A

T_J= 75°C

Peak Forward Surge

Current

I_FSM

30A

8.3ms, half sine,

Maximum

I_FM= 1.0A;

T_J= 25°C*

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

V_F

1.1V

SUGGESTED SOLDER

I_R

10µA

50µA

T_J= 25°C

T_J= 125°C

0.085”

Typical Junction

Capacitance

C_J

15pF

Measured at

1.0MHz, V_R=4.0V

0.095”

*Pulse test: Pulse width 300 µsec, Duty cycle 2%

0.075”

www.mccsemi.com

1 of 4

Revision: 4

2007/01/30

12 3 4

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