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GS1M-E PDF预览

GS1M-E

更新时间: 2024-11-15 07:02:03
品牌 Logo 应用领域
海湾 - GULFSEMI /
页数 文件大小 规格书
2页 139K
描述
SURFACE MOUNT GLASS PASSIVATED RECTIFIER VOLTAGE:600V to 1000V CURRENT: 1.0A

GS1M-E 数据手册

 浏览型号GS1M-E的Datasheet PDF文件第2页 
GS1J-E THRU GS1M-E  
SURFACE MOUNT GLASS  
PASSIVATED RECTIFIER  
VOLTAGE600V to 1000V  
CURRENT1.0A  
SMADO-214AC  
FEATURE  
Ideal for surface mount pick and place application  
Low profile package  
Built-in strain relief  
High surge capability  
High temperature soldering guaranteed  
260/10sec/at terminals  
Halogen Free  
MECHANICAL DATA  
TerminalPlated axial leads solderable per  
MIL-STD 202E, method 208C  
Case Molded with UL-94 class V-0 recognized Halogen  
Free Epoxy  
Polaritycolor band denotes cathode  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25, unless otherwise stated,  
for capacitive load, derate current by 20)  
SYMBOL  
GS1J-E  
GS1K-E  
GS1M-E  
units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
Vrrm  
Vrms  
Vdc  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking Voltage  
1000  
Maximum Average Forward Rectified Current  
3/8lead length  
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rated load  
Maximum Instantaneous Forward Voltage at  
rated Forward current  
If(av)  
Ifsm  
Vf  
1.0  
30.0  
1.1  
A
A
V
5.0  
200.0  
15.0  
Maximum DC Reverse Current  
at rated DC blocking voltage  
Ta =25  
Ta =125℃  
Ir  
A  
pF  
Typical Junction Capacitance  
Typical Thermal Resistance  
(Note 1)  
(Note 2)  
(Note 3)  
Cj  
Rth(jl)  
Rth(jc)  
Tj, Tstg  
30  
/W  
50  
Storage and Operating Junction Temperature  
-50 to +150  
Note  
1. Measured at 1.0 MHz and applied voltage of 4.0Vdc  
2. Thermal Resistance from Junction to terminal mounted on 5×5mm copper pad area  
3. Junction to Case  
Rev.A1  
www.gulfsemi.com  

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