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GR1JBF3 PDF预览

GR1JBF3

更新时间: 2024-11-05 15:33:23
品牌 Logo 应用领域
扬杰 - YANGJIE 快速恢复二极管光电二极管
页数 文件大小 规格书
5页 817K
描述
Rectifier Diode,

GR1JBF3 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:R-PDSO-C2Reach Compliance Code:unknown
风险等级:5.63其他特性:FREE WHEEELING DIODE
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.3 VJEDEC-95代码:DO-214AA
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:600 V最大反向电流:5 µA
最大反向恢复时间:0.25 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GR1JBF3 数据手册

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RoHS  
GR1AB THRU GR1MB  
COMPLIANT  
Surface Mount Fast Recovery Rectifier  
Features  
Low profile package  
● Ideal for automated placement  
Glass passivated chip junction  
● High forward surge capability  
Fast reverse recovery time  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in high frequency rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer and telecommunication.  
Mechanical Data  
ackage: DO-214AA (SMB  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
GR1AB  
GR1AB  
50  
GR1BB GR1DB GR1GB  
GR1JB  
GR1JB  
600  
GR1KB GR1MB  
PARAMETER  
SYMBOL  
UNIT  
GR1BB  
100  
GR1DB  
200  
GR1GB  
400  
GR1KB  
800  
GR1MB  
1000  
Device marking code  
V
RRM  
V
A
Repetitive peak reverse voltage  
Average rectified output current  
@60Hz sine wave, resistance load, TL (Fig.1)  
I
1.0  
30  
O
Surge(non-repetitive)forward current  
@60Hz half-sine wave,1 cycle, Ta=25  
I
A
FSM  
T
-55~+150  
-55~+150  
Storage temperature  
Junction temperature  
stg  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
PARAMETER  
SYMBOL  
GR1AB GR1BB GR1DB GR1GB GR1JB GR1KB GR1MB  
UNIT  
Maximum instantaneous  
forward voltage drop per diode  
V
F
I
=1.0A  
FM  
V
1.3  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
t
rr  
ns  
150  
250  
500  
T =25℃  
5.0  
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode @ VRM=VRRM  
I
μA  
RRM  
T =125℃  
a
100  
1 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S933  
Rev.1.2,20-Oct-16  
www.21yangjie.com  

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