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GR1JF2

更新时间: 2024-11-05 15:33:23
品牌 Logo 应用领域
扬杰 - YANGJIE 光电二极管
页数 文件大小 规格书
4页 647K
描述
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

GR1JF2 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:SMA, 2 PINReach Compliance Code:unknown
风险等级:5.76其他特性:FREE WHEELING DIODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大重复峰值反向电压:600 V最大反向恢复时间:0.25 µs
表面贴装:YES端子面层:Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GR1JF2 数据手册

 浏览型号GR1JF2的Datasheet PDF文件第2页浏览型号GR1JF2的Datasheet PDF文件第3页浏览型号GR1JF2的Datasheet PDF文件第4页 
RoHS  
GR1A THRU GR1M  
COMPLIANT  
Surface Mount Fast Recovery Rectifier  
Features  
Low profile package  
Ideal for automated placement  
Glass passivated chip junction  
● High forward surge capability  
Fast reverse recovery time  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in fast switching rectification of power  
supplies, inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
Mechanical Data  
ackage: DO-  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
GR1A  
GR1A  
50  
GR1B  
GR1B  
100  
GR1D  
GR1D  
200  
GR1G  
GR1G  
400  
GR1J  
GR1J  
600  
GR1K  
GR1K  
800  
GR1M  
GR1M  
1000  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
V
V
A
Repetitive peak reverse voltage  
RRM  
Average rectified output current  
@60Hz sine wave, Resistance load, Ta (FIG.1)  
I
O
1.0  
Surge(non-repetitive)forward current  
@ 60Hz Half-sine wave,1 cycle, Ta=25  
I
A
FSM  
30  
T
Storage temperature  
Junction temperature  
stg  
-55~+150  
-55 ~ +150  
T
j
T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
GR1A  
GR1B  
GR1D GR1G  
GR1J  
GR1K  
GR1M  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous  
forward voltage drop per diode  
V
I
=1.0A  
FM  
V
F
1.3  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
TRR  
ns  
150  
250  
500  
T =25℃  
5
a
Maximum DC reverse current  
at rated DC blocking voltage  
per diode@ VRM=VRRM  
I
μA  
RRM  
Ta=125℃  
100  
1 / 4  
S-S1101  
Rev1.3, 27-Feb-17  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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