BYM10-xxx, GL41x
Vishay General Semiconductor
www.vishay.com
Surface-Mount Glass Passivated Junction Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Ideal for automated placement
Superectifier®
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 250 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MELF (DO-213AB)
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive and telecommunication.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
1.0 A
Case: MELF (DO-213AB), molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
V
RRM (BYM10-xxx, GL41x)
50 V to 1000 V, 50 V to 1600 V
IFSM
30 A
10 μA
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
IR
EAS
VF
5 mJ
1.1 V, 1.2 V
175 °C
TJ max.
Package
MELF (DO-213AB)
Single
Circuit configuration
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
BYM
BYM
BYM
BYM
BYM
BYM
BYM
PARAMETER
10-50 10-100 10-200 10-400 10-600 10-800 10-1000
SYMBOL
UNIT
STANDARD RECOVERY
GL41A GL41B GL41D GL41G GL41J GL41K GL41M GL41T GL41Y
DEVICE: 1ST BAND IS WHITE
Polarity color bands (2nd band)
Gray
50
Red
100
Orange Yellow Green
Blue
800
Violet
1000
White
1300
Brown
1600
Max. repetitive peak
reverse voltage
VRRM
200
400
600
V
Max. RMS voltage
VRMS
VDC
35
50
70
140
200
280
400
420
600
560
800
700
910
1120
1600
V
V
Max. DC blocking voltage
100
1000
1300
Max. average forward rectified
current (fig. 1)
IF(AV)
IFSM
1.0
30
A
A
Peak forward surge current
8.3 ms single half sine-wave
Max. full load reverse current
full cycle average
IR(AV)
30
μA
at TA = 75 °C
Non-repetitive peak reverse
avalanche energy at TJ = 25 °C,
EAS
5
-
mJ
°C
IAS = 1 A, L = 10 mH
Operating junction and storage
temperature range
TJ, TSTG
-65 to +175
Revision: 18-May-2021
Document Number: 88546
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000