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GL41YHE3/96 PDF预览

GL41YHE3/96

更新时间： 2024-11-28 22:51:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 81K
描述
DIODE GEN PURP 1.6KV 1A DO213AB

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GL41YHE3/96 数据手册

 浏览型号GL41YHE3/96的Datasheet PDF文件第2页浏览型号GL41YHE3/96的Datasheet PDF文件第3页浏览型号GL41YHE3/96的Datasheet PDF文件第4页浏览型号GL41YHE3/96的Datasheet PDF文件第5页 
BYM10-xxx, GL41x  
Vishay General Semiconductor  
www.vishay.com  
Surface-Mount Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Ideal for automated placement  
Superectifier®  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 250 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MELF (DO-213AB)  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
1.0 A  
Case: MELF (DO-213AB), molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
V
RRM (BYM10-xxx, GL41x)  
50 V to 1000 V, 50 V to 1600 V  
IFSM  
30 A  
10 μA  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive peak  
reverse voltage rating  
IR  
EAS  
VF  
5 mJ  
1.1 V, 1.2 V  
175 °C  
TJ max.  
Package  
MELF (DO-213AB)  
Single  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
BYM  
BYM  
BYM  
BYM  
BYM  
BYM  
BYM  
PARAMETER  
10-50 10-100 10-200 10-400 10-600 10-800 10-1000  
SYMBOL  
UNIT  
STANDARD RECOVERY  
GL41A GL41B GL41D GL41G GL41J GL41K GL41M GL41T GL41Y  
DEVICE: 1ST BAND IS WHITE  
Polarity color bands (2nd band)  
Gray  
50  
Red  
100  
Orange Yellow Green  
Blue  
800  
Violet  
1000  
White  
1300  
Brown  
1600  
Max. repetitive peak  
reverse voltage  
VRRM  
200  
400  
600  
V
Max. RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
910  
1120  
1600  
V
V
Max. DC blocking voltage  
100  
1000  
1300  
Max. average forward rectified  
current (fig. 1)  
IF(AV)  
IFSM  
1.0  
30  
A
A
Peak forward surge current  
8.3 ms single half sine-wave  
Max. full load reverse current  
full cycle average  
IR(AV)  
30  
μA  
at TA = 75 °C  
Non-repetitive peak reverse  
avalanche energy at TJ = 25 °C,  
EAS  
5
-
mJ  
°C  
IAS = 1 A, L = 10 mH  
Operating junction and storage  
temperature range  
TJ, TSTG  
-65 to +175  
Revision: 18-May-2021  
Document Number: 88546  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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GL41YHE3/96 替代型号

型号 品牌 替代类型 描述 数据表
GL41YHE3/97 VISHAY

完全替代

 DIODE GEN PURP 1.6KV 1A DO213AB
GL41Y-E3/97 VISHAY

完全替代

 DIODE GEN PURP 1.6KV 1A DO213AB
GL41Y-E3/96 VISHAY

功能相似

 DIODE GEN PURP 1.6KV 1A DO213AB

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