Datasheet > GL4401

GL4401

更新时间： 2024-11-02 03:39:27

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	164K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

数据手册

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GL4401 数据手册

ISSUED DATE :2004/12/17

REVISED DATE :

GTM

CORPORATION

GL4401

N P N E P I TA X I A L P L A N A R T R A N S I S T O R

Description

The GL4401 is designed for general purpose switching and amplifier applications.

Features

Complementary to GL4403

High Power Dissipation: 1500mW at 25ć

High DC Current Gain: 100-300 at 150mA

Package Dimensions

SOT-223

Millimeter

REF.

Min.

Max.

7.30

3.10

0.10

10̓

Min.

13̓TYP.

2.30 REF.

Max.

6.70

2.90

0.02

0̓

6.30

6.70

3.70

1.80

6.30

3.30

1.40

0.60

0.25

0.80

0.35

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

Unit

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage at Ta=25к

Collector to Emitter Voltage at Ta=25к

Emitter to Base Voltage at Ta=25к

Collector Current at Ta=25к

VCBO

VCEO

VEBO

600

1.5

Total Power Dissipation at Ta=25к

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=100uA

BVCEO

BVEBO

C=1mA

E=10uA

100

400

750

950

1.2

CE=35V, VBE= 0.4V

*VCE(sat)1

*VCE(sat)2

*VBE(sat)1

*VBE(sat)2

=150mA, I

=500mA, I

=150mA, I

=500mA, I

=15mA

=50mA

=15mA

=50mA

750

*hFE

100

250

CE=1V, I

CE=2V, I

=0.1mA

=1mA

=10mA

=150mA

=500mA

300

MHz

CE=10V, I

C=20mA, f=100MHz

Cob

6.5

CB=5V, f=1MHz

Classification Of hFE

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Rank

Range

100-210

190-300

GL4401

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