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GL41MHE3/96 PDF预览

GL41MHE3/96

更新时间: 2024-11-28 22:51:39
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
5页 81K
描述
DIODE GEN PURP 1KV 1A DO213AB

GL41MHE3/96 技术参数

是否无铅: 不含铅生命周期:Active
零件包装代码:DO-213AB包装说明:O-PELF-R2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.33其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:DO-213AB
JESD-30 代码:O-PELF-R2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:WRAP AROUND端子位置:END
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GL41MHE3/96 数据手册

 浏览型号GL41MHE3/96的Datasheet PDF文件第2页浏览型号GL41MHE3/96的Datasheet PDF文件第3页浏览型号GL41MHE3/96的Datasheet PDF文件第4页浏览型号GL41MHE3/96的Datasheet PDF文件第5页 
BYM10-xxx, GL41x  
Vishay General Semiconductor  
www.vishay.com  
Surface-Mount Glass Passivated Junction Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Ideal for automated placement  
Superectifier®  
• Low forward voltage drop  
• Low leakage current  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 250 °C  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
MELF (DO-213AB)  
TYPICAL APPLICATIONS  
For use in general purpose rectification of power supplies,  
inverters, converters and freewheeling diodes for consumer,  
automotive and telecommunication.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
1.0 A  
Case: MELF (DO-213AB), molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
V
RRM (BYM10-xxx, GL41x)  
50 V to 1000 V, 50 V to 1600 V  
IFSM  
30 A  
10 μA  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
Polarity: two bands indicate cathode end - 1st band  
denotes device type and 2nd band denotes repetitive peak  
reverse voltage rating  
IR  
EAS  
VF  
5 mJ  
1.1 V, 1.2 V  
175 °C  
TJ max.  
Package  
MELF (DO-213AB)  
Single  
Circuit configuration  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
BYM  
BYM  
BYM  
BYM  
BYM  
BYM  
BYM  
PARAMETER  
10-50 10-100 10-200 10-400 10-600 10-800 10-1000  
SYMBOL  
UNIT  
STANDARD RECOVERY  
GL41A GL41B GL41D GL41G GL41J GL41K GL41M GL41T GL41Y  
DEVICE: 1ST BAND IS WHITE  
Polarity color bands (2nd band)  
Gray  
50  
Red  
100  
Orange Yellow Green  
Blue  
800  
Violet  
1000  
White  
1300  
Brown  
1600  
Max. repetitive peak  
reverse voltage  
VRRM  
200  
400  
600  
V
Max. RMS voltage  
VRMS  
VDC  
35  
50  
70  
140  
200  
280  
400  
420  
600  
560  
800  
700  
910  
1120  
1600  
V
V
Max. DC blocking voltage  
100  
1000  
1300  
Max. average forward rectified  
current (fig. 1)  
IF(AV)  
IFSM  
1.0  
30  
A
A
Peak forward surge current  
8.3 ms single half sine-wave  
Max. full load reverse current  
full cycle average  
IR(AV)  
30  
μA  
at TA = 75 °C  
Non-repetitive peak reverse  
avalanche energy at TJ = 25 °C,  
EAS  
5
-
mJ  
°C  
IAS = 1 A, L = 10 mH  
Operating junction and storage  
temperature range  
TJ, TSTG  
-65 to +175  
Revision: 18-May-2021  
Document Number: 88546  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

GL41MHE3/96 替代型号

型号 品牌 替代类型 描述 数据表
GL41MHE3/97 VISHAY

完全替代

DIODE GEN PURP 1KV 1A DO213AB
GL41M-E3/97 VISHAY

完全替代

DIODE GEN PURP 1KV 1A DO213AB
GL41M-E3/96 VISHAY

类似代替

Diode 1KV 1A 2-Pin DO-213AB T/R

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