Datasheet > GJSD1803

GJSD1803

更新时间： 2024-09-16 03:39:23

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	247K
描述
NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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获取价格

数据手册

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GJSD1803 数据手册

ISSUED DATE :2003/10/22

REVISED DATE :2005/01/13B

GTM

CORPORATION

GJSD1803

N P N E P I T AX I A L P L A N A R S I L I C O N T R A N S I S T O R

Description

The GJSD1803 applies to relay drivers, high-speed inverters, converters, and other general high-current

switching applications.

Features

*Low collector-to-emitter saturation voltage.

*High current and high f

*Excellent linearity of hFE

*Fast switching time

Package Dimensions

TO-252

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Min.

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

0.50

2.20

0.45

2.30 REF.

0.90

5.40

0.80

0.70

0.60

0.90

Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)

Parameter

Junction Temperature

Storage Temperature

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current(DC)

Collector Current(Pulse)

CBO

CEO

EBO

Collector Dissipation

Tc=25к

Electrical Characteristics (Ta = 25к unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

(BR)CBO

=10uA, I

=1mA, RBE=∞

=10uA, I =0

CB=40V, I =0

EB=4V, I =0

E=0

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

BE(sat)

0.22

0.95

0.4

=3A, I

=0.15A

1.3

=3A, I

FE1

FE2

400

CE=2V, I

=0.5A

=4A

CE=2V, I

180

500

MHZ

CE=5V,IC=1A

ton

tstg

See test circuit

Cob

VCB=10V, f=1MHz

GJSD1803

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