Datasheet > GJ5706

GJ5706

更新时间： 2024-11-05 03:39:23

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	931K
描述
NPN EPITAXIAL PLANAR SILICON TRANSISTOR

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数据手册

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GJ5706 数据手册

ISSUED DATE :2005/05/06

REVISED DATE :

GTM

CORPORATION

GJ5706

The GJ5706 is designed high current switching applications.

N P N E P I T A X I A L P L A N A R S I L I C O N T R A N S I S T O R

Description

Features

*Large current capacitance

*Low collector-to-emitter saturation voltage

*High-speed switching

*High allowable power dissipation

Package Dimensions

TO-252

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Min.

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

0.50

2.20

0.45

2.30 REF.

0.90

5.40

0.80

0.70

0.60

0.90

Absolute Maximum Ratings (Ta = 25к, unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

CBO

CES

CEO

EBO

Collector Current(Pulse)

Base Current

Junction Temperature

Storage Temperature

7.5

1.2

+150

-55 ~ +150

0.8

TsTG

Total Power Dissipation

=25к)

Electrical Characteristics (Rating at Ta=25к)

Symbol

BVCBO

Min.

Typ.

Max.

Unit

Test Conditions

=10uA, IE=0

=100uA, RBE=0

=1mA, RBE=∞

BVCES

BVCEO

BVEBO

=10uA, I

CB=40V, I

EB=4V, I =0

CBO

135

240

1.2

560

E=0

EBO

*VCE(sat)1

*VCE(sat)2

*VBE(sat)

*hFE

=1A, I

=2A, I

CE=2V, I

CE=10V, I

CB=10V, f=1MHz

=50mA

=100mA

200

=500mA

C=500mA

Cob

ton (Turn-On Time)

tstg (Storage Time)

tf (Fall Time)

400

300

MHz

See specified test circuit.

GJ5706

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