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GJ772

更新时间: 2024-11-05 03:39:23
品牌 Logo 应用领域
GTM 晶体晶体管局域网
页数 文件大小 规格书
3页 163K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

GJ772 数据手册

 浏览型号GJ772的Datasheet PDF文件第2页浏览型号GJ772的Datasheet PDF文件第3页 
ISSUED DATE :2002/12/13  
REVISED DATE :2005/08/10B  
GTM  
CORPORATION  
GJ772  
P N P E P I T AX I A L P L A N A R T R A N S I S T O R  
Description  
The GJ772 is designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and  
relay driver.  
Package Dimensions  
TO-252  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
3.00  
Min.  
Max.  
0.70  
2.40  
0.55  
0.15  
1.50  
5.80  
1.20  
A
B
C
D
E
F
6.40  
5.20  
6.80  
2.40  
G
H
J
K
L
M
R
0.50  
2.20  
0.45  
0
2.30 REF.  
0.90  
5.40  
0.80  
0.70  
0.60  
0.90  
0.90  
S
Absolute Maximum Ratings at Ta = 25к  
Parameter  
Junction Temperature  
Storage Temperature  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Symbol  
Tj  
Ratings  
+150  
-55~+150  
Unit  
к
к
V
V
V
A
A
A
W
Tstg  
VCBO  
-40  
-30  
-5  
-3  
-7  
VCEO  
VEBO  
IC  
IC  
IB  
Collector Current (Pulse)  
Base Current  
-0.6  
10  
Total Power Dissipation(T  
C
=25к)  
PD  
Electrical Characteristics (Ta = 25к)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
V
Test Conditions  
BVCBO  
BVCEO  
BVEBO  
-40  
-30  
-5  
-
-
-
-
-
-
I
I
I
V
V
I
I
V
V
V
V
C
=-100uA , I  
=-1mA, I =0  
=0  
=0  
=0  
E=0  
C
B
V
E=-10uA ,I  
C
I
I
CBO  
-
-
-
-
-
-
-1  
-1  
-0.5  
-2  
-
500  
-
-
uA  
uA  
V
CB=-30V, I  
EB=-3V, I  
E
EBO  
C
*VCE(sat)  
*VBE(sat)  
*hFE  
*hFE  
fT  
-0.3  
-1  
-
-
80  
55  
C
=-2A, I  
C=-2A, I  
B
=-0.2A  
=-0.2A  
V
B
1
2
30  
100  
-
CE=-2V, I  
CE=-2V, I  
CE=-5V, I  
C
C
C
=-20mA  
=-1A  
MHz  
pF  
=-0.1A, f=100MHz  
CB=-10V, IE=0, f=1MHz  
Cob  
-
* Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
2
Rank  
Q
P
E
Range  
100 - 200  
160 - 320  
250 - 500  
GJ772  
Page: 1/3  

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