Datasheet > GJ772

GJ772

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	163K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GJ772 数据手册

ISSUED DATE :2002/12/13

REVISED DATE :2005/08/10B

GTM

CORPORATION

GJ772

P N P E P I T AX I A L P L A N A R T R A N S I S T O R

Description

The GJ772 is designed for using in output stage of 10W amplifier, voltage regulator, DC-DC converter and

relay driver.

Package Dimensions

TO-252

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Min.

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

0.50

2.20

0.45

2.30 REF.

0.90

5.40

0.80

0.70

0.60

0.90

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55~+150

Unit

Tstg

VCBO

-40

-30

-5

-3

-7

VCEO

VEBO

Collector Current (Pulse)

Base Current

-0.6

Total Power Dissipation(T

=25к)

Electrical Characteristics (Ta = 25к)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

-40

-30

-5

=-100uA , I

=-1mA, I =0

E=0

E=-10uA ,I

CBO

-1

-0.5

-2

500

CB=-30V, I

EB=-3V, I

EBO

*VCE(sat)

*VBE(sat)

*hFE

-0.3

-1

=-2A, I

C=-2A, I

=-0.2A

100

CE=-2V, I

CE=-5V, I

=-20mA

=-1A

MHz

=-0.1A, f=100MHz

CB=-10V, IE=0, f=1MHz

Cob

* Pulse Test: Pulse WidthЉ380ꢀs, Duty CycleЉ2%

Classification Of hFE

Rank

Range

100 - 200

160 - 320

250 - 500

GJ772

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