Pb Free Plating Product
ISSUED DATE :2006/08/16
REVISED DATE :
GTM
CORPORATION
BVDSS
DS(ON)
25V
4.5mꢀ
75A
GJ75N03
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast
switching performance.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and
suited for low voltage applications such as DC/DC converters.
Features
*Low Gate Charge
*Simple Drive Requirement
*Fast Switching
Package Dimensions
TO-252
Millimeter
Millimeter
Min.
0.50
2.20
0.45
0
0.90
5.40
0.80
REF.
REF.
Min.
Max.
6.80
5.50
7.20
3.00
Max.
0.70
2.40
0.55
0.15
1.50
5.80
1.20
A
B
C
D
E
F
6.40
5.20
6.80
2.40
G
H
J
K
L
2.30 REF.
0.70
0.60
0.90
0.90
M
R
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Ratings
25
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current, VGS@4.5V
Continuous Drain Current, VGS@4.5V
Pulsed Drain Current1
ID @T
ID @T
IDM
PD @T =25к
C
=25к
75
A
C
=100к
62.5
350
A
A
Total Power Dissipation
C
96
W
Linear Derating Factor
0.75
400
W/к
mJ
A
Single Pulse Avalanche Energy2
Single Pulse Avalanche Current
Operating Junction and Storage Temperature Range
EAS
IAS
40
Tj, Tstg
-55 ~ +150
к
Thermal Data
Parameter
Symbol
Rthj-case
Rthj-amb
Value
1.3
Unit
к/W
к/W
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
110
GJ75N03
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