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GJ494 PDF预览

GJ494

更新时间: 2024-11-24 03:39:23
品牌 Logo 应用领域
GTM /
页数 文件大小 规格书
4页 257K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GJ494 数据手册

 浏览型号GJ494的Datasheet PDF文件第2页浏览型号GJ494的Datasheet PDF文件第3页浏览型号GJ494的Datasheet PDF文件第4页 
Pb Free Plating Product  
ISSUED DATE :2006/12/07  
REVISED DATE :  
GTM  
CORPORATION  
BVDSS  
DS(ON)  
30V  
11m  
55A  
GJ494  
R
I
D
N-CHANNEL ENHANCEMENT MODE POWER MOSFET  
Description  
The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge.  
The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited  
for use as a high side switch in SMPS and general purpose applications.  
Features  
*Simple Drive Requirement  
*Lower On-resistance  
*Fast Switching Characteristic  
Package Dimensions  
TO-252  
Millimeter  
Millimeter  
Min.  
0.50  
2.20  
0.45  
0
0.90  
5.40  
0.80  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
3.00  
Max.  
0.70  
2.40  
0.55  
0.15  
1.50  
5.80  
1.20  
A
B
C
D
E
F
6.40  
5.20  
6.80  
2.40  
G
H
J
K
L
2.30 REF.  
0.70  
0.60  
0.90  
0.90  
M
R
S
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VGS  
±12  
V
Continuous Drain Current, VGS@10V  
Continuous Drain Current, VGS@10V  
Pulsed Drain Current1  
ID @T  
ID @T  
IDM  
PD @T =25к  
C
=25к  
55  
A
C
=100к  
39  
A
120  
A
Total Power Dissipation  
C
63  
W
Linear Derating Factor  
0.42  
-55 ~ +175  
W/к  
к
Operating Junction and Storage Temperature Range  
Tj, Tstg  
Thermal Data  
Parameter  
Symbol  
Rthj-c  
Value  
2.4  
Unit  
к/W  
к/W  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max.  
Max.  
Rthj-a  
50  
GJ494  
Page: 1/4  

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