Datasheet > GJ494

GJ494

更新时间： 2024-11-05 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	257K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GJ494 数据手册

Pb Free Plating Product

ISSUED DATE :2006/12/07

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

11mꢀ

55A

GJ494

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge.

The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited

for use as a high side switch in SMPS and general purpose applications.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Characteristic

Package Dimensions

TO-252

Millimeter

Min.

0.50

2.20

0.45

0.90

5.40

0.80

REF.

Min.

Max.

6.80

5.50

7.20

3.00

Max.

0.70

2.40

0.55

0.15

1.50

5.80

1.20

6.40

5.20

6.80

2.40

2.30 REF.

0.70

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

120

Total Power Dissipation

Linear Derating Factor

0.42

-55 ~ +175

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Value

2.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GJ494

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