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GI812-E3/73 PDF预览

GI812-E3/73

更新时间： 2024-09-17 15:33:07
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 74K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Signal Diode

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GI812-E3/73 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：DO-15
包装说明：O-PALF-W2针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.68
其他特性：HIGH RELIABILITY外壳连接：ISOLATED
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.2 V
JEDEC-95代码：DO-204ACJESD-30 代码：O-PALF-W2
JESD-609代码：e3最大非重复峰值正向电流：30 A
元件数量：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：1 A封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT APPLICABLE认证状态：Not Qualified
最大重复峰值反向电压：200 V最大反向恢复时间：0.75 µs
子类别：Rectifier Diodes表面贴装：NO
端子面层：MATTE TIN端子形式：WIRE
端子位置：AXIAL处于峰值回流温度下的最长时间：NOT APPLICABLE
Base Number Matches：1

GI812-E3/73 数据手册

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GI810, GI811, GI812, GI814, GI816, GI817, GI818  
www.vishay.com  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
SUPERECTIFIER®  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
DO-204AC (DO-15)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For general purpose of medium frequency rectification.  
IF(AV)  
1.0 A  
50 V, 100 V, 200 V, 400 V, 600 V,  
800 V, 1000 V  
VRRM  
MECHANICAL DATA  
Case: DO-204AC, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
IFSM  
30 A  
750 ns  
trr  
IR  
10 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test  
VF  
1.2 V  
TJ max.  
Package  
Diode variation  
175 °C  
DO-204AC (DO-15)  
Single die  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 75 °C  
IF(AV)  
1.0  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
-65 to +175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT  
Maximum instantaneous  
1.0 A  
VF  
IR  
1.2  
V
forward voltage  
TA= 25 °C  
10  
Maximum DC reverse current at  
rated DC blocking voltage  
μA  
TA= 100 °C  
100  
IF = 1.0 A, VR = 30 V,  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
750  
25  
ns  
dI/dt = 50 A/μs  
4.0 V, 1 MHz  
CJ  
pF  
Revision: 13-Jun-16  
Document Number: 88628  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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