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GI812-HE3/73 PDF预览

GI812-HE3/73

更新时间： 2024-11-07 20:50:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 71K
描述
DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Signal Diode

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GI812-HE3/73 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-15
包装说明：ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN针数：2
Reach Compliance Code：unknown风险等级：5.71
Base Number Matches：1

GI812-HE3/73 数据手册

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GI810 thru GI818  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current  
SUPERECTIFIER®  
DO-204AC (DO-15)  
• High forward surge capability  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For general purpose of medium frequency rectification.  
PRIMARY CHARACTERISTICS  
MECHANICAL DATA  
IF(AV)  
1.0 A  
Case: DO-204AC, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
VRRM  
IFSM  
trr  
50 V to 1000 V  
30 A  
750 ns  
10 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
IR  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
VF  
1.2 V  
TJ max.  
175 °C  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA= 75 °C  
IF(AV)  
1.0  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS  
SYMBOL GI810 GI811 GI812 GI814 GI816 GI817 GI818 UNIT  
Maximum instantaneous  
forward voltage  
1.0 A  
VF  
IR  
1.2  
V
TA= 25 °C  
10  
Maximum DC reverse current at  
rated DC blocking voltage  
μA  
TA= 100 °C  
100  
IF = 1.0 A, VR = 30 V,  
dI/dt = 50 A/μs  
Maximum reverse recovery time  
Typical junction capacitance  
trr  
750  
25  
ns  
4.0 V, 1 MHz  
CJ  
pF  
Document Number: 88628  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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