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GI510

更新时间: 2024-01-25 16:04:41
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
2页 55K
描述
PLASTIC SILICON RECTIFIER

GI510 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:O-PALF-W2Reach Compliance Code:unknown
风险等级:5.59应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJEDEC-95代码:DO-27
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM最大重复峰值反向电压:1000 V
最大反向电流:5 µA子类别:Rectifier Diodes
表面贴装:NO端子形式:WIRE
端子位置:AXIAL

GI510 数据手册

 浏览型号GI510的Datasheet PDF文件第1页 
RATINGS AND CHARACTERISTIC CURVES  
GI500---GI510  
FIG.1 -- FORWARD DERATING CURVE  
FIG.2 --MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
100  
6
5
4
80  
60  
3
S ingle P hase  
H alf W ave 60H  
R esistive or  
40  
Z
TJ=125  
8.3ms Single Half  
Sine Wave  
20  
2
1
Inductive Load  
0
0
25  
50  
75  
100  
125  
150  
175  
4
6
40 60  
0
2
10  
20  
100  
AMBIENTTEMPERATURE,  
NUMBER OF CYCLES AT 60Hz  
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS  
100  
100  
TJ=25  
Pulse Width=300uS  
40  
10  
20  
10  
T
J = 1 5 0  
4
1
T
J = 1 0 0  
1
0.1  
0.4  
T
J =  
2
5
0.1  
0.6 0.8 1.0 1.2 1.4 1.6  
1.8 2.0  
0.01  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,VOLTS  
PERCENT OF RATED PEAK REVERSE VOLTAGE,%  
FIG.5 -- TYPICAL JUNCTION CAPACITANCE  
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE  
100  
60  
40  
100  
20  
10  
10  
4
TJ=25  
f=1MHz  
2
1
.1  
.1  
.2  
.4  
1.0  
2
4
10  
20 40  
100  
0.1  
0.01  
0.1  
1
10  
10  
REVERSE VOLTAGE,VOLTS  
PULSE DURATION, SEC  
www.galaxycn.com  
2.  
Document Number 0260026  
BLGALAXY ELECTRICAL  

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