Datasheet > GI60T03

GI60T03

更新时间： 2024-10-28 03:39:23

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	242K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GI60T03 数据手册

Pb Free Plating Product

ISSUED DATE :2005/11/24

REVISED DATE :

GTM

CORPORATION

BVDSS

DS(ON)

30V

12mꢀ

45A

GI60T03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GI60T03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The through-hole version (TO-251) is available for low-profile applications and suited for low voltage

applications such as DC/DC converters.

Features

*Low Gate Charge

*Simple Drive Requirement

*Fast Switching Speed

*RoHS Compliant

Package Dimensions

TO-251

Millimeter

REF.

Min.

Max.

6.80

5.50

7.20

7.80

Min.

0.50

2.20

0.45

0.90

5.40

Max.

0.70

2.40

0.55

0.60

1.50

5.80

6.40

5.20

6.80

7.20

2.30 REF.

0.60

0.90

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±20

Continuous Drain Current, V_GS@10V

Pulsed Drain Current¹

I_D@T

I_DM

P_D@T =25к

=25к

=100к

120

Total Power Dissipation

W/к

Linear Derating Factor

0.352

-55 ~ +175

Operating Junction and Storage Temperature Range

Tj, Tstg

Thermal Data

Parameter

Symbol

Rthj-c

Value

3.4

Unit

к/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

110

I60T03

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