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GI510-E3/4H PDF预览

GI510-E3/4H

更新时间: 2024-02-01 00:08:28
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 336K
描述
DIODE 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

GI510-E3/4H 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:1000 V最大反向恢复时间:2 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GI510-E3/4H 数据手册

 浏览型号GI510-E3/4H的Datasheet PDF文件第2页浏览型号GI510-E3/4H的Datasheet PDF文件第3页浏览型号GI510-E3/4H的Datasheet PDF文件第4页 
GI500 thru GI510  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
200 V to 1000 V  
100 A  
5.0 µA  
VF  
1.1 V  
Tj max.  
150 °C  
DO-201AD  
Features  
Mechanical Data  
• Low forward voltage drop  
Case: DO-201AD, molded epoxy body  
• Low leakage current, I less than 0.1 µA  
Epoxy meets UL-94V-0 Flammability rating  
R
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols GI500 GI501 GI502 GI504 GI506 GI508 GI510  
Units  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3.0  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 95 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
100  
A
Operating junction temperature range  
Storage temperature range  
TJ  
- 50 to + 150  
- 50 to + 150  
°C  
°C  
TSTG  
Document Number 88626  
25-Aug-05  
www.vishay.com  
1

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