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GI506/58-E3 PDF预览

GI506/58-E3

更新时间: 2024-10-28 13:31:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 336K
描述
DIODE 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

GI506/58-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DO-201AD
包装说明:O-PALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.6
Is Samacsys:N其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT
应用:GENERAL PURPOSE外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJEDEC-95代码:DO-201AD
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT APPLICABLE认证状态:Not Qualified
最大重复峰值反向电压:600 V最大反向恢复时间:2 µs
表面贴装:NO端子面层:MATTE TIN
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

GI506/58-E3 数据手册

 浏览型号GI506/58-E3的Datasheet PDF文件第1页浏览型号GI506/58-E3的Datasheet PDF文件第2页浏览型号GI506/58-E3的Datasheet PDF文件第4页 
GI500 thru GI510  
Vishay General Semiconductor  
100  
10  
1
100  
TJ = 25°C  
f = 1.0MHz  
Vsig = 50mVp-p  
TJ = 25°C  
Pulse Width = 300 µs  
1% Duty Cycle  
10  
0.1  
1
0.1  
0.01  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
100  
10  
1
10  
TJ = 150 °C  
1
TJ = 100 °C  
0.1  
TJ = 25 °C  
0.01  
0.1  
0.01  
0
20  
40  
60  
80  
100  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t, Pulse Duration (sec.)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-201AD  
1.0 (25.4)  
Min.  
0.210 (5.3)  
0.190 (4.8)  
Dia.  
0.375 (9.5)  
0.285 (7.2)  
1.0 (25.4)  
Min.  
0.052 (1.32)  
0.048 (1.22)  
Dia.  
Document Number 88626  
25-Aug-05  
www.vishay.com  
3

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