5秒后页面跳转
GI508 PDF预览

GI508

更新时间: 2024-02-03 11:49:07
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
2页 55K
描述
PLASTIC SILICON RECTIFIER

GI508 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.81配置:SINGLE
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
最大非重复峰值正向电流:100 A元件数量:1
最高工作温度:175 °C最大输出电流:3 A
最大重复峰值反向电压:800 V子类别:Rectifier Diodes
表面贴装:NO

GI508 数据手册

 浏览型号GI508的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
GI500---GI510  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 3.0 A  
PLASTIC SILICON RECTIFIER  
FEATURES  
Low cost  
Diffused junction  
DO--27  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned witn Freon,Alcohol,lsopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.041 ounces,1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
GI  
500  
GI  
501  
GI  
502  
GI  
504  
GI  
506  
GI  
508  
GI  
510  
UNITS  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
A
3.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
100.0  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 9.4 A  
V
A
1.1  
VF  
Maximum reverse current  
@TA=25  
5.0  
50.0  
IR  
at rated DC blocking voltage @TA=100  
pF  
35  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
CJ  
20  
Rθ  
/ W  
JA  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
2. Thermal resistance from junction to ambient.  
www.galaxycn.com  
BLGALAXY ELECTRICAL  
1.  
Document Number 0260026  

与GI508相关器件

型号 品牌 描述 获取价格 数据表
GI508/100-E3 VISHAY DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

GI508/4E VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

获取价格

GI508/4E-E3 VISHAY DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

GI508-E3/68 VISHAY DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, PLASTIC PACKAGE-2, Rectifier Diode

获取价格

GI50L02 GTM N-CHANNEL ENHANCEMENT MODE POWER MOSFET

获取价格

GI510 BL Galaxy Electrical PLASTIC SILICON RECTIFIER

获取价格