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GI4672 PDF预览

GI4672

更新时间: 2024-10-28 03:39:23
品牌 Logo 应用领域
GTM 晶体晶体管
页数 文件大小 规格书
2页 162K
描述
NPN EPITAXIAL SILICON TRANSISTOR

GI4672 数据手册

 浏览型号GI4672的Datasheet PDF文件第2页 
ISSUED DATE :2005/07/15  
REVISED DATE :  
GTM  
CORPORATION  
G
I
4672  
N P N E P I T A X I A L S I L I C O N T R A N S I S T O R  
Description  
The GI4672 is designed for low frequency amplifier applications.  
Features  
ԦLow saturation voltage, typically VCE(sat) =0.1V at I  
ԦExcellent DC current gain characteristics  
Package Dimensions  
C/I  
B=1A/50mA  
TO-251  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
6.80  
5.50  
7.20  
7.80  
Min.  
0.50  
2.20  
0.45  
0.45  
0.90  
5.40  
Max.  
0.70  
2.40  
0.55  
0.60  
1.50  
5.80  
A
B
C
D
E
F
6.40  
5.20  
6.80  
7.20  
G
H
J
K
L
2.30 REF.  
0.60  
0.90  
M
Absolute Maximum Ratings (T  
Parameter  
A
=25к)  
Symbol  
Ratings  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
V
CBO  
60  
V
CEO  
50  
V
V
EBO  
6
V
Collector Current (DC)  
I
I
C
C
2
A
Collector Current (Pulse PW=10ms)  
5
1.5  
A
Total Device Dissipation (T  
Total Device Dissipation (T  
Junction Temperature  
A
=25к)  
P
D
D
W
W
к
к
C
=25к)  
P
10  
T
J
150  
Storage Temperature  
T
stg  
-55 ~ +150  
Electrical Characteristics (TA = 25к unless otherwise noted)  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Test Conditions  
BVCBO  
60  
-
-
-
V
I
I
I
V
V
C
C
=50uA, I  
E
=0  
=0  
=0  
=0  
=0  
=50mA  
=500mA  
=500mA, f=100MHz  
=0, f=1MHz  
BVCEO  
BVEBO  
50  
-
-
-
V
=1mA, IB  
6
-
-
-
-
V
E=50uA, IC  
I
I
CBO  
100  
100  
0.35  
400  
-
nA  
nA  
V
CB=60V, IE  
EBO  
-
EB=5V, I  
=1A, I  
C
*VCE(sat)  
*hFE  
fT  
0.1  
-
I
C
B
120  
V
V
V
CE=2V, I  
C
-
-
210  
25  
MHz  
pF  
CE=2V, IE  
Cob  
-
CB=10V, IE  
*Pulse Test: Pulse WidthЉ380s, Duty CycleЉ2%  
Classification Of hFE  
Rank  
A
B
Range  
120 ~ 240  
200 ~ 400  
G
I4672  
Page: 1/2  

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