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GI501/51 PDF预览

GI501/51

更新时间: 2024-01-09 12:02:59
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 336K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-201AD, PLASTIC PACKAGE-2

GI501/51 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:DO-201AD包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.66Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:GENERAL PURPOSE
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-201ADJESD-30 代码:O-PALF-W2
JESD-609代码:e0最大非重复峰值正向电流:100 A
元件数量:1相数:1
端子数量:2最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:2 µs表面贴装:NO
端子面层:TIN LEAD端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GI501/51 数据手册

 浏览型号GI501/51的Datasheet PDF文件第2页浏览型号GI501/51的Datasheet PDF文件第3页浏览型号GI501/51的Datasheet PDF文件第4页 
GI500 thru GI510  
Vishay General Semiconductor  
General Purpose Plastic Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
200 V to 1000 V  
100 A  
5.0 µA  
VF  
1.1 V  
Tj max.  
150 °C  
DO-201AD  
Features  
Mechanical Data  
• Low forward voltage drop  
Case: DO-201AD, molded epoxy body  
• Low leakage current, I less than 0.1 µA  
Epoxy meets UL-94V-0 Flammability rating  
R
• High forward surge capability  
• Solder Dip 260 °C, 40 seconds  
Terminals: Matte tin plated (E3 Suffix) leads,  
solderable per J-STD-002B and JESD22-B102D  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
application.  
(Note: These devices are not Q101 qualified. There-  
fore, the devices specified in this datasheet have not  
been designed for use in automotive or Hi-Rel appli-  
cations.)  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbols GI500 GI501 GI502 GI504 GI506 GI508 GI510  
Units  
V
Maximum repetitive peak reverse voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
3.0  
600  
420  
600  
800  
560  
800  
1000  
700  
Maximum RMS voltage  
V
V
A
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current 0.375"  
(9.5 mm) lead length at TA = 95 °C  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-  
wave superimposed on rated load  
IFSM  
100  
A
Operating junction temperature range  
Storage temperature range  
TJ  
- 50 to + 150  
- 50 to + 150  
°C  
°C  
TSTG  
Document Number 88626  
25-Aug-05  
www.vishay.com  
1

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