Datasheet > GF4936

GF4936

更新时间： 2024-11-05 23:53:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	101K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 30V V(BR)DSS \| 5.8A I(D) \| SO

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中文翻译

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数据手册

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GF4936 数据手册

GF4936

Dual N-Channel Enhancement-Mode MOSFET

30V R

37 Ω I 5.8A

DS(ON)

D1 D1 D2 D2

7 5

SO-8

0.197 (5.00)

0.189 (4.80)

0.157 (3.99)

0.150 (3.81)

S1 G1 S2 G2

0.244 (6.20)

0.228 (5.79)

0.05 (1.27)

0.04 (1.02)

Dimensions in inches

and (millimeters)

0.165 (4.19)

0.155 (3.94)

0.245 (6.22)

Min.

0.019 (0.48)

x 45°

0.020 (0.51)

0.013 (0.33)

0.010 (0.25)

0.009 (0.23)

0.007 (0.18)

0.050 (1.27)

0.069 (1.75)

0.053 (1.35)

0.035 (0.889)

0.025 (0.635)

0.050 typ.

(1.27)

0.050(1.27)

0.016 (0.41)

0°– 8°

0.009 (0.23)

0.004 (0.10)

Mounting Pad Layout

Mechanical Data

Features

Case: SO-8 molded plastic body

• Advanced Trench Process Technology

Terminals: Leads solderable per MIL-STD-750,

Method 2026

• High Density Cell Design for Ultra Low

On-Resistance

High temperature soldering guaranteed:

250°C/10 seconds at terminals

• Specially Designed for Low Voltage DC/DC

Converters

Mounting Position: Any

Weight: 0.5g

• Fast Switching for High Efficiency

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_DS

V_GS

I_D

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

5.8

I_DM

T_A= 25°C

T_A= 70°C

2.0

1.3

Maximum Power Dissipation⁽¹⁾

P_D

Operating Junction and Storage Temperature Range

Maximum Junction-to-Ambient⁽¹⁾Thermal Resistance

T_J, T_stg

R_θJA

–55 to 150

62.5

°C

°C/W

Note:

(1) Surface mounted on FR4 board, t ≤ 10 sec.

4/11/01

12 3 4 5

中文翻译

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