Datasheet > GF4810

GF4810

更新时间： 2024-11-22 23:53:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	89K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 10A I(D) \| SO

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GF4810 数据手册

GF4810

N-Channel MOSFET & Schottky Diode

MOSFET: V 30V R

13.5 Ω I 10A

m D

DS(ON)

Schottky: V 30V V 0.53V I 4.0A

SO-8

0.197 (5.00)

0.189 (4.80)

0.157 (3.99)

0.150 (3.81)

0.244 (6.20)

0.228 (5.79)

Dimensions in inches

and (millimeters)

0.05 (1.27)

0.04 (1.02)

Mounting Pad

Layout

0.019 (0.48)

0.010 (0.25)

x 45°

0.020 (0.51)

0.013 (0.33)

0.165 (4.19)

0.155 (3.94)

0.245 (6.22)

Min.

0.009 (0.23)

0.007 (0.18)

0.050 (1.27)

0.069 (1.75)

0.053 (1.35)

0.035 (0.889)

0.025 (0.635)

0.050 typ.

(1.27)

0.050(1.27)

0.016 (0.41)

0°– 8°

0.009 (0.23)

0.004 (0.10)

Features

Mechanical Data

•

Enhancement mode MOSFET and Schottky Diode in a

compact package

Case: SO-8 molded plastic body

Terminals: Leads solderable per MIL-STD-750,

• Advanced Trench Process Technology and high Density

Cell Design for Ultra Low On-Resistance

• Suitable for Low Voltage DC/DC Converters

Method 2026

Mounting Position: Any

Weight: 0.5g

• High performance Schottky diode with low V_Fand high I_F

Maximum Ratings and Thermal Characteristics(T_A= 25°C unless otherwise noted)

MOSFET

Parameter

Symbol

V_DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

Continuous Drain Current

T_A= 25°C

T_A= 70°C

I_D

(T_J= 150°C)⁽¹⁾

Pulsed Drain Current

Continuous Source Current (MOSFET Diode Conduction)⁽¹⁾

I_DM

I_S

2.3

Maximum Power Dissipation⁽¹⁾

T_A= 25°C

T_A= 70°C

2.3

1.5

P_D

Operating Junction and Storage Temperature Range

Maximum Thermal Resistance Junction-to-Ambient⁽¹⁾

T_J, T_stg

R_θJA

–55 to 150

°C

°C/W

Schottky

Reverse Voltage

V_R

P_D

T_A= 25°C

T_A= 70°C

1.4

0.9

Maximum Power Dissipation⁽¹⁾

Average Forward Current⁽¹⁾

Pulsed Forward Current

I_F

I_FM

4.0

Operating Junction and Storage Temperature Range

Maximum Thermal Resistance Junction-to-Ambient⁽¹⁾

Notes: (1) Surface Mounted on FR4 Board, t ≤ 10 sec.

T_J, T_stg

R_θJA

–55 to 150

°C

°C/W

4/27/01

12 3 4 5

中文翻译

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