Datasheet > GD103SD

GD103SD

更新时间： 2024-11-21 03:39:11

品牌	Logo	应用领域
GTM		二极管开关
页数	文件大小	规格书
2页	195K
描述
SURFACE MOUNT,SWITCHING DIODE

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数据手册

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GD103SD 数据手册

ISSUED DATE :2005/01/10

REVISED DATE :

GTM

CORPORATION

GD103SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 4 0 V, C U R R E N T 3 5 0 m A

Description

The GD103SD is designed for low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time

and low reverse capacitance.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.05

0.10

1.00

1.45

1.80

2.70

Min.

Max.

0.85

0.20

0.25

0.10

0.40

0.18

0.80

1.15

1.60

2.30

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

-65 ~ +125

Unit

Storage Temperature

Tstg

Peak Repetitive Reverse Voltage

RMS Reverse Voltage

R(RMS)

Forward Continuous Current

350

Repetitive Peak Forward Current(tЉ1.0s)

FRM

1.5

Thermal Resistance Junction to Ambient

ꢀJA

625

к/W

Total Power Dissipation at Ta = 25к

225

Characteristics at Ta = 25к

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

V(BR)R

IR=10ꢁA

F(1)

370

600

5.0

ꢁA

IF=20mA

IF=200mA

VR=30V

Forward Voltage

VF(2)

Reverse Leakage Current

Total Capacitance

5.0

VR=0V, f=1MHz

IF=IR=200mA, IR(Rec)=20mA, RL=100Ө

Reverse Recover Time

Trr

GD103SD

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