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GBU8M PDF预览

GBU8M

更新时间: 2024-11-25 11:54:39
品牌 Logo 应用领域
美微科 - MCC 整流二极管桥式整流二极管IOT局域网
页数 文件大小 规格书
3页 100K
描述
8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts

GBU8M 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:R-PSFM-T4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.19
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4JESD-609代码:e0
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBU8M 数据手册

 浏览型号GBU8M的Datasheet PDF文件第2页浏览型号GBU8M的Datasheet PDF文件第3页 
M C C  
GBU8A  
THRU  
GBU8M  
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20736 Marilla Street Chatsworth  
ꢇꢌꢆꢍꢎꢏꢎꢎ  
ꢐꢑꢅꢒꢉꢓꢆꢔꢕꢎꢕ ꢆ!ꢖꢎ"#ꢍꢏꢏ  
$ꢊ%ꢓꢆ   ꢔꢕꢎꢕ ꢆ!ꢖꢎ"#ꢍꢏꢍ  
TM  
Micro Commercial Components  
Features  
8 Amp Single Phase  
Glass Passivated  
Bridge Rectifier  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Glass Passivated Chip Junction  
High Surge Overload Rating  
Lead Free Finish/RoHS Compliant (NOTE 1)("P" Suffix  
designates RoHS Compliant. See ordering information)  
50 to 1000 Volts  
Maximum Ratings  
GBU  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
Typical Thermal Resistance 2.2°C/W Junction to Case  
UL Recognized File # E165989  
Maximum  
Recurrent  
Peak  
Reverse  
Voltage  
Maximum  
MCC  
Device  
Maximum  
RMS  
Voltage  
DC  
Blocking  
Voltage  
Part Number Marking  
Case Style  
3.2x45  
A
C
N
N
N
I
GBU8A  
GBU8B  
GBU8D  
GBU8G  
GBU8J  
GBU8K  
GBU8M  
GBU8A  
GBU8B  
GBU8D  
GBU8G  
GBU8J  
GBU8K  
GBU8M  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
50V  
100V  
200V  
400V  
600V  
800V  
1000V  
G
K
H
B
140V  
280V  
420V  
560V  
700V  
J
1.90 RADIUS  
N
-
+
~
~
D
L
E
M
F
DIMENSIONS  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
INCHES  
MM  
MIN  
21.80  
18.30  
3.30  
17.50  
0.76  
0.46  
Average Forward  
Current  
IF(AV)  
8 A  
Tc = 100°C  
DIM  
A
B
C
D
E
F
G
H
I
J
MIN  
.860  
.720  
.130  
.690  
.030  
.018  
.290  
.140  
.065  
.089  
.077  
.040  
.190  
MAX  
.880  
.740  
.140  
.710  
.039  
.022  
.310  
.160  
MAX  
22.30  
18.80  
3.56  
NOTE  
Peak Forward Surge  
Current  
IFSM  
200A  
8.3ms, half sine  
18.00  
1.00  
0.56  
7.90  
4.10  
2.16  
2.75  
2.35  
1.27  
5.33  
Maximum  
IFM=4A  
7.40  
3.50  
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.0V  
TJ = 25°C  
.085  
.108  
.093  
.050  
.210  
1.65  
2.25  
1.95  
1.02  
4.83  
K
L
M
N
IR  
5 µA  
500uA  
TJ = 25°C  
TJ = 125°C  
7.0 TYPICAL  
I2t Rating for fusing  
I2t  
CJ  
166A2S  
60pF  
(t<8.3ms)  
Typical Junction  
Capacitance  
Measured at  
1.0MHz, VR=4.0V  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7  
www.mccsemi.com  
1 of 3  
Revision: 6  
2008/03/24  

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