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GBUL1008A PDF预览

GBUL1008A

更新时间: 2024-11-19 15:19:31
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扬杰 - YANGJIE /
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4页 215K
描述
GBU

GBUL1008A 数据手册

 浏览型号GBUL1008A的Datasheet PDF文件第2页浏览型号GBUL1008A的Datasheet PDF文件第3页浏览型号GBUL1008A的Datasheet PDF文件第4页 
RoHS  
GBUL1008A  
COMPLIANT  
Low VF Bridge Rectifiers  
Features  
● UL recognition, file #E230084  
● Glass passivated chip junction  
● Ideal for printed circuit boards  
● High surge current capability  
● Low VF  
● Solder dip 275 °C max. 7 s, per JESD 22-B106  
Typical Applications  
General purpose use in AC/DC bridge full wave rectification for  
monitor, TV, printer, power supply, switching mode power supply,  
adapter, audio equipment, and home appliances applications.  
Mechanical Data  
ackage: GBU  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
As marked on body  
Polarity:  
~
~
(T =25Unless otherwise specified  
Maximum Ratings  
a
GBUL1008A  
GBUL1008A  
800  
PARAMETER  
SYMBOL  
UNIT  
Device marking code  
V
V
V
V
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
V
480  
RMS  
V
Maximum DC blocking Voltage  
800  
DC  
With heatsink  
Tc =113℃  
Without heatsink  
Ta =25℃  
10  
3.6  
Average rectified output current  
@60Hz sine wave, R-load  
I
O
A
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25℃  
Forward Surge Current (Non-repetitive)  
220  
I
A
FSM  
I2t  
440  
200  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
A2S  
@1ms≤t≤8.3ms Tj=25, Rating of per diode  
T
Storage temperature  
Junction temperature  
-55 ~ +150  
-55 ~ +150  
stg  
T
j
Dielectric strength  
@ Terminals to case, AC 1 minute  
Mounting torque  
@Recommend torque5kgꞏcm  
V
KV  
dis  
2.5  
8
Tor  
kgꞏcm  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
GBUL1008A  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous forward  
voltage drop per diode  
V
V
0.92  
5
F
I
=5.0A  
FM  
T =25℃  
j
Maximum DC reverse current at rated  
DC blocking voltage per diode  
I
μA  
pF  
R
100  
T =125℃  
j
Measured at 1MHz and  
Applied Reverse Voltage  
of 4.0 V.D.C  
Typical junction capacitance  
Cj  
110  
1 / 4  
S-B302  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  
Rev. 2.3,22-Apr-22