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GBUE2560 PDF预览

GBUE2560

更新时间: 2024-11-19 14:55:55
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威世 - VISHAY /
页数 文件大小 规格书
5页 138K
描述
Low VF Single-Phase Single In-Line Bridge Rectifier

GBUE2560 数据手册

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GBUE2560  
Vishay General Semiconductor  
www.vishay.com  
Low VF Single-Phase Single In-Line Bridge Rectifier  
FEATURES  
• UL recognition file number E312394  
• Oxide planar chip junction  
• Low forward voltage drop  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• Ideal for printed circuit boards  
+
• High surge current capability  
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• High case dielectric strength of 1500 VRMS  
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Case Style GBU  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Case Style GBU  
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for switching power supply, home applications, and  
white-goods applications specially or telecom power  
supply, high efficiency desktop PC and server SMPS.  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: GBU  
PRIMARY CHARACTERISTICS  
Molding compound meets UL 94 V-0 flammability rating  
IF(AV)  
25 A  
600 V  
350 A  
0.75 V  
175 °C  
GBU  
Base P/N-M3  
industrial grade  
- halogen-free, RoHS-compliant, and  
VRRM  
IFSM  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
VF at IF = 12.5 A (125 °C)  
TJ max.  
M3 suffix meet JESD 201 class 1A whisker test  
Polarity: as marked on body  
Package  
Circuit configuration  
In-line  
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.  
Recommended Torque: 5.7 cm-kg (5 inches-lbs)  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
GBUE2560  
GBUE2560  
600  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
420  
Maximum DC blocking voltage  
600  
(1)  
T
C = 140 °C  
IO  
25  
Maximum average forward rectified output current at  
A
(2)  
TA = 25 °C  
IO  
4.9  
Non-repetitive peak forward surge current 8.3 ms single sine-wave, TJ = 25 °C  
Rating for fusing (t < 8.3 ms)  
IFSM  
I2t  
350  
A
A2s  
508  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +175  
°C  
Notes  
(1)  
Unit case mounted on aIuminum plate heatsink  
Units mounted on PCB without heatsink  
(2)  
Revision: 27-Nov-2023  
Document Number: 87633  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000