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GBU8K_NL

更新时间: 2024-01-02 10:22:53
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管局域网
页数 文件大小 规格书
3页 250K
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GBU8K_NL 数据手册

 浏览型号GBU8K_NL的Datasheet PDF文件第2页浏览型号GBU8K_NL的Datasheet PDF文件第3页 
GBU8A - GBU8K  
0.125 X 45O  
(3.2) Typ  
0.880 (22.3)  
0.860 (21.8)  
0.020 R  
TYP  
Features  
0.160 (4.1)  
0.140 (3.5)  
0.310 (7.9)  
0.290 (7.4)  
+
+
0.740 (18.8)  
0.720 (18.3)  
Surge overload rating: 200 amperes peak.  
0.075 R  
(1.9)  
0.085 (2.16)  
0.065 (1.65)  
Reliable low cost construction utilizing  
molded plastic technique.  
+
~
~
0.080 (2.03)  
0.060 (1.52)  
0.710 (18.0)  
0.690 (17.5)  
Ideal for printed circuit board.  
0.100 (2.54)  
0.085 (2.16)  
GBU  
0.080 (2.03)  
0.065 (1.65)  
0.050 (1.27)  
0.040 (1.02)  
0.050 (1.3)  
0.040 (1.0)  
Dimensions are in:  
inches (mm)  
0.210 (5.3)  
0.190 (4.8)  
8.0 Ampere Bridge Rectifiers  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
IO  
8.0  
6.0  
A
A
Average Rectified Current  
@ TA = 100°C  
@ TA = 45°C  
Peak Forward Surge Current  
if(surge)  
8.3 ms single half-sine-wave  
Superimposed on rated load (JEDEC method)  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient,** per leg  
200  
A
PD  
6.9  
55  
18  
W
mW/°C  
°C/W  
RqJA  
Tstg  
TJ  
Storage Temperature Range  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
**Device mounted on PCB with 0.5 x 0.5" (12 x 12 mm).  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Parameter  
Device  
Units  
8A  
50  
35  
50  
8B  
100  
70  
8D  
200  
140  
200  
8G  
400  
280  
400  
8J  
8K  
800  
560  
800  
Peak Repetitive Reverse Voltage  
Maximum RMS Input Voltage  
600  
420  
600  
V
V
V
100  
DC Reverse Voltage (Rated VR)  
Maximum Reverse Leakage, per element  
5.0  
500  
mA  
mA  
@ rated VR  
TA = 25°C  
TA = 100°C  
Maximum Forward Voltage Drop, per element  
@ 8.0 A  
1.0  
166  
V
I2t rating for fusing  
t < 8.35 ms  
A2Sec  
GBU8A-GBU8M, Rev. A  
ã 1998 Fairchild Semiconductor Corporation  

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