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GBU8KD

更新时间: 2024-11-25 10:41:07
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德欧泰克 - DIOTEC /
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2页 142K
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Protectifiers - LowVF Bridge Rectifier with Overvoltage Protection

GBU8KD 数据手册

 浏览型号GBU8KD的Datasheet PDF文件第2页 
GBU8KD ... GBU8KG  
GBU8KD ... GBU8KG  
Protectifiers® – LowVF Bridge Rectifier with Overvoltage Protection  
Protectifiers® – LowVF-Brückengleichrichter mit Überspannungsschutz  
Version 2011-08-25  
Nominal current  
Nennstrom  
8 A  
140 V, 280 V  
21.5±0.7  
3.6±0.2  
3.4±0.1  
Alternating input voltage  
Eingangswechselspannung  
Plastic case  
Kunststoffgehäuse  
20.8 x 3.3 x 18 [mm]  
GBU ...  
+
~
~
2.2  
0.5+0.1  
Weight approx. – Gewicht ca.  
7 g  
1.8  
+0.2  
- 0.1  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.1  
5.08  
Dimensions - Maße [mm]  
Standard packaging bulk  
Standard Lieferform lose im Karton  
Features  
Vorteile  
Low VF for reduced power losses  
High inrush surge capability IFSM  
Reverse overvoltage protection PPPM  
UL Recognized Product – File E175067  
Niedriges VF für reduzierte Verluste  
Hoher Einschalt-Stromstoß IFSM  
Sperrseitiger Überspannungsschutz PPPM  
UL-anerkanntes Produkt – File Nr. E175067  
Maximum ratings and Charactistics (TJ = 25°C)  
Grenz- und Kennwerte (TJ = 25°C)  
Type  
Typ  
Alternating input voltage  
Max. rev. current  
Breakdown voltage  
Abbruch-Spannung  
Forward voltage  
Eingangswechselspannung Max. Sperrstrom 1)  
Fluss-Spannung 1)  
VVRMS [V]  
< 140  
ID [µA] @ VWM [V]  
VBR [V] @ IT [mA]  
VF [V] @ IF [A]  
GBU8KD  
GBU8KG  
< 5  
< 5  
190  
380  
> 210  
> 400  
1
1
< 0.9  
< 0.9  
8
8
< 280  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
IFRM  
IFSM  
i2t  
60 A 2)  
300/330 A  
450 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
TA = 25°C  
TA = 25°C  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-50...+150°C  
-50...+150°C  
Thermal resistance junction to case  
RthC  
< 3 K/W  
Wärmewiderstand Sperrschicht – Gehäuse  
Admissible torque for mounting  
Zulässiges Anzugsdrehmoment  
M3  
9 ± 10% lb.in.  
1 ± 10% Nm  
1
2
Valid per diode – Gültig pro Diode  
Valid, if leads are kept at ambient temperature TA = 50°C at a distance of 5 mm from case  
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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