Datasheet > GBU8M

GBU8M

更新时间： 2024-11-25 07:01:11

品牌	Logo	应用领域
SECOS		二极管 IOT 局域网
页数	文件大小	规格书
2页	158K
描述
8.0 A MP Glass Passivated Bridge Rectifiers

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中文翻译

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数据手册

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GBU8M 数据手册

GBU8A ~ GBU8M

VOLTAGE 50V ~ 1000V

Elektronische Bauelemente

8.0 AMP Glass Passivated Bridge Rectifiers

RoHS Compliant Product

A suffix of “-C” specifies halogen-free.

LC-35

.874(22.2)

.860(21.8)

3.2*3.2

CHAMFER

.139(3.53)

.133(3.37)

.154(3.9)

.146(3.7)

.752(19.1)

.720(18.3)

FEATURES

.232(5.9)

.224(5.7)

Glass passivated die construction

Ideal for printed circuit board

.073(1.85)

.057(1.45)

High case dielectric strength of 1500VRMS

Plastic material has underwrites laboratory

flammability classification 94V-0

.100(2.54)

.085(2.16)

Max..138(3.5)

.022(.56)

Low reverse leakage current

Surge overload rating to 200A peak

Polarity: marked on body

.018(.46)

.080(2.03)

.065(1.65)

.047(1.2)

.035(0.9)

.106(2.7)

.091(2.3)

Mounting position: Any

.210 .210 .210

.190 .190 .190

(5.3) (5.3) (5.3)

(4.8) (4.8) (4.8)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25^oC ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz,

For capacitive load, derate current by 20%.

U8K

GBU8A

GBU8M

TYPE NUMBER

SYMBOL

GBU8B

GBU8D

GBU8G

GBU8J

UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

1000

Maximum DC Blocking Voltage

Maximum Average Forward (with heatsink Note2)

Rectified Current @ T_C=100 (without heatsink)

Peak Forward Surge Current, 8.3 ms single

half Sine-wave superimposed

I_(AV)

8.0

I_FSM

200

on rated load (JEDEC method)

Maximum Forward Voltage at 2.0A

Maximum DC Reverse Current Ta=25 к

at Rated DC Blocking Voltage Ta=125 к

I²t Rating for fusing (t<8.3ms)

V_F

I_R

I²t

1.0

5.0

500

µA

A²S

166

Typical Junction Capacitance

per element (Note1)

C_J

130

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

R_șJC

T_J

T_STG

2.2

- 55 ~ + 150

к / W

NOTES:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

2. Device mounted on 50mm x 50mm x 1.6mm Cu Plate Heatsink.

http://www.SeCoSGmbH.com/

Any changing of specification will not be informed individual

Page 1 of 2

01-Jun-2002 Rev. A

中文翻译

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与GBU8M相关器件

型号	品牌	获取价格	描述	数据表
GBU8M(LS)	DIODES	获取价格	8A GLASS PASSIVATED BRIDGE RECTIFIER
GBU8M/1	VISHAY	获取价格	Bridge Rectifier Diode, 8A, 1000V V(RRM),
GBU8M/51-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Recti
GBU8M/72	VISHAY	获取价格	Bridge Rectifier Diode, 1 Phase, 8A, 1000V V(RRM), Silicon, PLASTIC, CASE GBU, 4 PIN
GBU8M/72-E3	VISHAY	获取价格	DIODE 3 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Recti
GBU8M-BP	MCC	获取价格	8 Amp Single Phase Glass Passivated Bridge Rectifier 50 to 1000 Volts
GBU8M-E3	VISHAY	获取价格	DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, PLASTIC, CASE GBU, 4 PIN, B
GBU8M-E3/45	VISHAY	获取价格	Glass Passivated Single-Phase Bridge Rectifier
GBU8M-E3/51	VISHAY	获取价格	Diode Rectifier Bridge Single 1KV 8A 4-Pin Case GBU
GBU8M-E3-E3	VISHAY	获取价格	Bridge Rectifier Diode, 3A, 1000V V(RRM),

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