Datasheet > GBU8M

GBU8M

更新时间： 2024-11-25 12:49:55

品牌	Logo	应用领域
CHENG-YI		二极管 IOT 局域网
页数	文件大小	规格书
2页	169K
描述
SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS

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中文翻译

获取价格

数据手册

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GBU8M 数据手册

GBU8A thru GBU8M SERIES

SSIILLIICCOONN BBRRIIDDGGEE RREECCTTIIFFIIEERRSS

GGLLAASSSS PPAASSSSIIVVAATTEEDD

CCHHEENNGG--YYII

BBRRIIDDGGEE RREECCTTIIFFIIEERRSS

ELECTRONIC

REVERSE VOLTAGE -50 to 1000 Volts

FORWARD CURRENT -8.0 Amperes

FEATURES

Surge overload rating-175 amperes peak

Ideal for printed circuit board

Reliable low cost construction utilizing

molded plastic technique

Plastic material has Underwriters Laboratory

Flammability classification 94V-O

Mounting Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

GBU8A

GBU8B GBU8D GBU8G GBU8J

GBU8K GBU8M

UNITS

V_RRM

V_RMS

V_DC

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Bridge Input Voltage

Maximum DC Blocking Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

100

1000

8.0

3.2

Maximum Average Forward (with heatsink Note2)

I_(AV)

Rectified Current @ ^T=100 C (without heatsink)

Peak Forward Surge Current

8.3 ms single half sine-wave

I_FSM

200

superimposed on rated load(JEDEC Method)

1.0

5.0

Maximum DC Forward Voltage at 4.0A DC

=25 C

Maximum DC Reverse Current

at rated DC Blocking Voltage

I_R

=125 C

500

A S

I t Rating for fusing (t<8.3ms)

166

I t

Typical Junction Capacitance per element(Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

2.2

C/W

-55 to +150

T_STG

Storage Temperature Range

NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 100mm x 100mm X 1.6mm Cu Plate Heatsink.

中文翻译

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